[논문]High Pressure Deuterium Passivation of Charge Trapping Layer for Nonvolatile Memory Applications

Sung, Jae-Young; Jeong, Jun-Kyo; Ko, Woon-San; Byun, Jun-Ho; Lee, Hi-Deok; Lee, Ga-Won

doi:10.3390/mi12111316

[해외논문] High Pressure Deuterium Passivation of Charge Trapping Layer for Nonvolatile Memory Applications 원문보기

Micromachines, v.12 no.11, 2021년, pp.1316 -

Sung, Jae-Young , Jeong, Jun-Kyo , Ko, Woon-San , Byun, Jun-Ho , Lee, Hi-Deok , Lee, Ga-Won

Abstract ▼ AI-Helper

In this study, the deuterium passivation effect of silicon nitride (Si3N4) on data retention characteristics is investigated in a Metal-Nitride-Oxide-Silicon (MNOS) memory device. To focus on trap passivation in Si3N4 as a charge trapping layer, deuterium (D2) high pressure annealing (HPA) was applied after Si3N4 deposition. Flat band voltage shifts (ΔVFB) in data retention mode were compared by CV measurement after D2 HPA, which shows that the memory window decreases but charge loss in retention mode after program is suppressed. Trap energy distribution based on thermal activated retention model is extracted to compare the trap density of Si3N4. D2 HPA reduces the amount of trap densities in the band gap range of 1.06–1.18 eV. SIMS profiles are used to analyze the D2 profile in Si3N4. The results show that deuterium diffuses into the Si3N4 and exists up to the Si3N4-SiO2 interface region during post-annealing process, which seems to lower the trap density and improve the memory reliability.

Keyword

참고문헌 (25)

1. Qin S. Jiang Z. Li H. Fujii S. Lee D. Wong S.S. Wong H.S.P. Next-generation ultrahigh-density 3D vertical resistive switching memory (VRSM)-Part I: Accurate and Computationally Efficient Modeling IEEE Trans. Electron Devices 2019 66 5139 5146 10.1109/TED.2019.2950606

상세보기
2. Endoh T. Honjo H. Nishioka K. Ikeda S. Progresses in STT-MRAM and SOT-MRAM for Next Generation MRAM Proceedings of the 2020 IEEE Symposium on VLSI Technology Honolulu, HI, USA 16–19 June 2020
3. Ishimaru K. Challenges of flash memory for next decade Proceedings of the 2021 IEEE International Reliability Physics Symposium (IRPS) Monterey, CA, USA 23 January 2021
4. Chen T.S. Wu K.H. Chung H. Kao C.H. Performance improvement of SONOS memory by bandgap engineering of charge-trapping layer IEEE Electron Device Lett. 2004 25 205 207 10.1109/LED.2004.825163

상세보기
5. Wang S.Y. Lue H.T. Lai E.K. Yang L.W. Yang T. Chen K.C. Gong J. Hsieh K.Y. Liu R. Lu C.Y. Reliability and processing effects of bandgap engineered SONOS (BESONOS) flash memory Proceedings of the 2007 IEEE International Reliability Physics Symposium Proceedings 45th Annual Phoenix, AZ, USA 1–19 April 2007
6. Kim H.D. An H.M. Kim K.C. Seo Y.J. Kim T.G. Influence of post-annealing on the electrical properties of metal/oxide/silicon nitride/oxide/silicon capacitors for flash memories Semicond. Sci. Technol. 2008 23 075046 10.1088/0268-1242/23/7/075046

상세보기
7. Lim J.G. Yang S.D. Yun H.J. Jung J.K. Park J.H. Lim C. Cho G.S. Park S.G. Huh C. Lee H.D. High performance SONOS flash memory with in-situ silicon nanocrystals embedded in silicon nitride charge trapping layer Solid-State Electron. 2018 140 134 138 10.1016/j.sse.2017.10.031

상세보기
8. Furnemont A. Zahid M.B. Degraeve R. Breuil L. Cacciato A. Rothschild A. Olsen C. Ganguly U. Van Houdt J. Nitride engineering for improved erase performance and retention of TANOS NAND Flash memory Proceedings of the 2008 Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design Opio, France 18–22 May 2008
9. Chasin A. Franco J. Bury E. Ritzenthaler R. Litta E. Spessot A. Horiguchi N. Linten D. Kaczer B. Relevance of fin dimensions and high-pressure anneals on hot-carrier degradation Proceedings of the 2020 IEEE International Reliability Physics Symposium (IRPS) Dallas, TX, USA 28 April–30 May 2020
10. Park J.Y. Yoo T.J. Yu J.M. Lee B.H. Choi Y.K. Impact of Post-Metal Annealing WITH Deuterium or Nitrogen for Curing a Gate Dielectric Using Joule Heat Driven by Punch-Through Current IEEE Electron Device Lett. 2020 42 276 279 10.1109/LED.2020.3043384

상세보기
11. Lee J. Cheng K. Chen Z. Hess K. Lyding J.W. Kim Y.K. Lee H.S. Kim Y.W. Suh K.P. Application of high pressure deuterium annealing for improving the hot carrier reliability of CMOS transistors IEEE Electron Device Lett. 2000 21 221 223

상세보기
12. Tanaka M. Saida S. Mitani Y. Mizushima I. Tsunashima Y. Highly reliable MONOS Devices with optimized silicon nitride film having deuterium terminated charge traps Proceedings of the Digest International Electron Devices Meeting San Francisco, CA, USA 8–11 December 2002
13. Choi S. Baek S. Jang M. Jeon S. Kim J. Kim C. Hwang H. Effects of High-Pressure Deuterium annealing on nonvolatile memory device with silicon nanocrystals embedded in silicon nitride J. Electrochem. Soc. 2005 152 G345 10.1149/1.1878012

상세보기
14. Choi S. Jang M. Park H. Hwang H. Jeon S. Kim J. Kim C. High-pressure deuterium annealing for improving the reliability characteristics of silicon-oxide-nitride-oxide-silicon nonvolatile memory devices Appl. Phys. Lett. 2004 85 6415 6417 10.1063/1.1842363

상세보기
15. Breuil L. Lisoni J.G. Delhougne R. Tan C.L. Van Houdt J. Furnemont A. Improvement of poly-Si channel vertical charge trapping NAND devices characteristics by high pressure D 2 /H 2 annealing Proceedings of the 2016 IEEE 8th International Memory Workshop (IMW) Paris, France 15–18 May 2016
16. Yu J.M. Park J.Y. Yoo T.J. Han J.K. Yun D.H. Lee G.B. Hur J. Lee B.H. Kim S.Y. Lee B.H. Quantitative analysis of high-pressure Deuterium annealing effects on vertically stacked Gate-All-Around SONOS memory IEEE Trans. Electron. Devices 2020 67 3903 3907 10.1109/TED.2020.3008882

상세보기
17. Schmidt J. Schuurmans F.M. Sinke W.C. Glunz S.W. Aberle A.G. Observation of multiple defect states at silicon-silicon nitride interfaces fabricated by low-frequency plasma enhanced chemical vapor deposition Appl. Phys. Lett. 1997 71 252 254 10.1063/1.119512

상세보기
18. Perera R. Ikeda A. Hattori R. Kuroki Y. Effects of post annealing on removal of defect states in silicon oxynitride films grown by oxidation of silicon substrates nitride in inductively couple nitrogen plasma Thin Solid Film. 2003 423 212 217 10.1016/S0040-6090(02)01044-1

상세보기
19. Hess K. Kizilyalli I.C. Lyding J.W. Giant Isotope Effect in Hot Electron Degradation of Metal Oxide Silicon Devices IEEE Trans. Electron Devices 1998 45 406 416 10.1109/16.658674

상세보기
20. Scardera G. Puzzer T. Conibeer G. Green M.A. Fourier transform infrared spectroscopy of annealed silicon-rich silicon nitride thin films J. Appl. Phys. 2008 104 104310 10.1063/1.3021158

상세보기
21. Lu Z. Santos-Filho P. Stevens G. Williams M.J. Lucovsky G. Fourier transform infrared study of rapid thermal annealing of aSi_N_H(D) films prepared by remote plasma enhanced chemical vapor deposition J. Vac. Sci. Technol. A Vac. Surf. Film. 1995 13 607 613 10.1116/1.579794

상세보기
22. Sandhya C. Ganguly U. Singh K.K. Singh P.K. Olsen C. Seutter S.M. Hung R. Conti G. Ahmed K. Krishna N. Nitride Engineering and the effect of interfaces on charge trap flash performance and reliability Proceedings of the 2008 IEEE International Reliability Physics Symposium Phoenix, AZ, USA 27 April–1 May 2008
23. Yang Y.L. White M.H. Charge retention of scaled SONOS nonvolatile memory devices at elevated temperatures Solid-State Electron. 2000 44 949 958 10.1016/S0038-1101(00)00012-5

상세보기
24. Chang M. Hasan M. Jung S. Park H. Jo M. Choi H. Hwang H. Impact of high-pressure deuterium oxide annealing on the blocking efficiency and interface quality of metal-alumina-nitride-oxide-silicon-type flash memory devices Appl. Phys. Lett. 2007 91 192111 10.1063/1.2812570

상세보기
25. Carlson D.E. Magee C.W. A SIMS analysis of deuterium diffusion in hydrogenated amorphous silicon Appl. Phys. Lett. 1978 33 81 83 10.1063/1.90153

상세보기

LOADING...

활용도 분석정보

상세보기

다운로드

내보내기

활용도 Top5 논문

해당 논문의 주제분야에서 활용도가 높은 상위 5개 콘텐츠를 보여줍니다.
더보기 버튼을 클릭하시면 더 많은 관련자료를 살펴볼 수 있습니다.

원문 보기

AccessON 원문보기

원문 URL 링크

DOI : 10.3390/mi12111316 [무료]
PubMed Central : 저널 > 논문 [무료]
MDPI : 저널
AccessON : 저널

*원문 PDF 파일 및 링크정보가 존재하지 않을 경우 KISTI DDS 시스템에서 제공하는 원문복사서비스를 사용할 수 있습니다.

ScienceON TREND 반도체

오픈액세스(OA) 유형

GOLD

오픈액세스 학술지에 출판된 논문

저작권 관리 안내

내보내기 메뉴

내보내기 구분

파일저장
인쇄
메일전송

구성항목

기본정보
상세정보

관리번호, 논문명, 저널/프로시딩명, 저자 , 발행년, 권, 호, 시작페이지, 끝페이지, 발행기관

저장형식

Text(ASCII format)
Excel format
RefWorks Direct Export
RIS format (for Reference Manager, ProCite, EndNote), Scholar's Aids, Mendeley

메일정보

받는사람 (필수): @
보내는사람 (선택): @
제목
내용: KISTI 검색결과 이메일 서비스

안내

총 건의 자료가 검색되었습니다.

다운받으실 자료의 인덱스를 입력하세요. (1-10,000)

검색결과의 순서대로 최대 10,000건 까지 다운로드가 가능합니다.

데이타가 많을 경우 속도가 느려질 수 있습니다.(최대 2~3분 소요)

다운로드 파일은 UTF-8 형태로 저장됩니다.
파일의 내용이 제대로 보이지 않을실 때는 웹브라우저 상단의 보기 -> 인코딩 -> 자동선택 여부를 확인하십시오.

Text(ASCII format)
Excel format

표제어: PCR

동의어: Packet Collision Rate

용어 설명 출처 목록 (6)

용어 설명: PCR은 세균 특이성이 있는 primer를 이용하여 적은 수의 세균이 있을지라도 쉽게 검출할 수 있는 유용한 방법이며, 이를 이용하여 구강 내 치면세균막이나 타액에서 직접 세균을 검출할 수 있게 되었다[8].

AI-Helper ※ AI-Helper는 을 사용합니다.

AI-Helper

안녕하세요, AI-Helper입니다. 좌측 "선택된 텍스트"에서 텍스트를 선택하여 요약, 번역, 용어설명을 실행하세요.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.

연합인증