[논문]Improved Self-Curing Effect in a MOSFET With Gate Biasing

Lee, Geon-Beom; Jung, Jin-Woo; Kim, Choong-Ki; Bang, Tewook; Yoo, Min-Soo; Choi, Yang-Kyu

doi:10.1109/led.2021.3119281

[해외논문] Improved Self-Curing Effect in a MOSFET With Gate Biasing

IEEE electron device letters : a publication of the IEEE Electron Devices Society, v.42 no.12, 2021년, pp.1731 - 1734

Lee, Geon-Beom (Korea Advanced Institute of Science and Technology (KAIST), School of Electrical Engineering, Daejeon, South Korea) , Jung, Jin-Woo (Korea Advanced Institute of Science and Technology (KAIST), School of Electrical Engineering, Daejeon, South Korea) , Kim, Choong-Ki (SK Hynix Inc., Icheon-si, South Korea) , Bang, Tewook (SK Hynix Inc., Icheon-si, South Korea) , Yoo, Min-Soo (SK Hynix Inc., Icheon-si, South Korea) , Choi, Yang-Kyu (Korea Advanced Institute of Science and Technology (KAIST), School of Electrical Engineering, Daejeon, South Korea)

Abstract ▼ AI-Helper

Stress-induced damage in a MOSFET can be cured by Joule heating, which can be produced by an intentional forward junction current ( ${I}_{\textbf {FWD}}$). This curing effect can be further enhanced by the simultaneous application of gate biasing, which does not influence the ${I}_{\textbf {FWD}}$. A MOSFET was intentionally degraded by harsh hot-carrier injection (HCI) then the damage was cured and nearly returned to its pristine state. The improved self-curing effect was quantitatively verified using low-frequency noise (LFN) analyses. Self-curing by internal heat from the ${I}_{\textbf {FWD}}$ more effectively cured the HCI damage than a nonself-curing using external heat from a hot chuck.

참고문헌 (16)

Park, Jun-Young, Yun, Dae-Hwan, Choi, Yang-Kyu. Curing of Hot-Carrier Induced Damage by Gate-Induced Drain Leakage Current in Gate-All-Around FETs. IEEE electron device letters : a publication of the IEEE Electron Devices Society, vol.40, no.12, 1909-1912.

상세보기
Jun-Young Park, Dong-Il Moon, Myeong-Lok Seol, Choong-Ki Kim, Chang-Hoon Jeon, Hagyoul Bae, Tewook Bang, Yang-Kyu Choi. Self-Curable Gate-All-Around MOSFETs Using Electrical Annealing to Repair Degradation Induced From Hot-Carrier Injection. IEEE transactions on electron devices, vol.63, no.3, 910-915.

상세보기
Ragnarsson, Lars-Åke, Lundgren, Per. Electrical characterization of Pb centers in (100)Si-SiO2 structures: The influence of surface potential on passivation during post metallization anneal. Journal of applied physics, vol.88, no.2, 938-942.

상세보기
10.1109/IRPS45951.2020.9128218
Ghibaudo, G., Roux, O., Nguyen-Duc, Ch., Balestra, F., Brini, J.. Improved Analysis of Low Frequency Noise in Field-Effect MOS Transistors. Physica status solidi. A, Applied research, vol.124, no.2, 571-581.

상세보기
10.1007/978-1-4020-5910-0
Atlas user’s manual device simulation software 2008
Fleetwood, D. M., Winokur, P. S., Reber Jr., R. A., Meisenheimer, T. L., Schwank, J. R., Shaneyfelt, M. R., Riewe, L. C.. Effects of oxide traps, interface traps, and ‘‘border traps’’ on metal-oxide-semiconductor devices. Journal of applied physics, vol.73, no.10, 5058-5074.

상세보기
Stathis, J.H., Zafar, S.. The negative bias temperature instability in MOS devices: A review. Microelectronics reliability, vol.46, no.2, 270-286.

상세보기
Aichinger, T., Nelhiebel, M., Einspieler, S., Grasser, T.. In Situ Poly Heater—A Reliable Tool for Performing Fast and Defined Temperature Switches on Chip. IEEE transactions on device and materials reliability : a publication of the IEEE Electron Devices Society and the IEEE Reliability Society, vol.10, no.1, 3-8.

상세보기
Onishi, K., Kang, Chang Seok, Choi, Rino, Cho, Hag-Ju, Gopalan, S., Nieh, R.E., Krishnan, S.A., Lee, J.C.. Improvement of surface carrier mobility of HfO₂ MOSFETs by high-temperature forming gas annealing. IEEE transactions on electron devices, vol.50, no.2, 384-390.

상세보기
Lee, Geon-Beom, Kim, Choong-Ki, Park, Jun-Young, Bang, Tewook, Bae, Hagyoul, Kim, Seong-Yeon, Ryu, Seung-Wan, Choi, Yang-Kyu. A Novel Technique for Curing Hot-Carrier-Induced Damage by Utilizing the Forward Current of the PN-Junction in a MOSFET. IEEE electron device letters : a publication of the IEEE Electron Devices Society, vol.38, no.8, 1012-1014.

상세보기
Mulaosmanovic, Halid, Breyer, Evelyn T., Mikolajick, Thomas, Slesazeck, Stefan. Recovery of Cycling Endurance Failure in Ferroelectric FETs by Self-Heating. IEEE electron device letters : a publication of the IEEE Electron Devices Society, vol.40, no.2, 216-219.

상세보기
Lee, Geon-Beom, Kim, Choong-Ki, Yoo, Min-Soo, Choi, Yang-Kyu. Low-Frequency Noise Characteristics Under the OFF-State Stress. IEEE transactions on electron devices, vol.67, no.10, 4366-4371.

상세보기
IEEE Trans Electron Devices Hot-electron-induced MOSFET degradation—Model, monitor, and improvement hu 1985 ed 32 375
Park, Jun-Young, Hur, Jae, Choi, Yang-Kyu. Demonstration of a Curable Nanowire FinFET Using Punchthrough Current to Repair Hot-Carrier Damage. IEEE electron device letters : a publication of the IEEE Electron Devices Society, vol.39, no.2, 180-183.

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DOI : 10.1109/LED.2021.3119281
IEEE : 저널 > 논문

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