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NTIS 바로가기IEEE journal of solid-state circuits, v.56 no.11, 2021년, pp.3388 - 3398
Park, Dae-Woong (Korea Advanced Institute of Science and Technology (KAIST), School of Electrical Engineering, Daejeon, South Korea) , Utomo, Dzuhri Radityo (Korea Advanced Institute of Science and Technology (KAIST), School of Electrical Engineering, Daejeon, South Korea) , Yun, Byeonghun (Korea Advanced Institute of Science and Technology (KAIST), School of Electrical Engineering, Daejeon, South Korea) , Mahmood, Hafiz Usman (Korea Advanced Institute of Science and Technology (KAIST), School of Electrical Engineering, Daejeon, South Korea) , Hong, Jong-Phil (Chungbuk National University, School of Electrical Engineering, Cheongju, South Korea) , Lee, Sang-Gug (Korea Advanced Institute of Science and Technology (KAIST), School of Electrical Engineering, Daejeon, South Korea)
This article reports the concept of a double maximum achievable gain (double-
Yun, Byeonghun, Park, Dae-Woong, Mahmood, Hafiz Usman, Kim, Doyoon, Lee, Sang-Gug. A D-Band High-Gain and Low-Power LNA in 65-nm CMOS by Adopting Simultaneous Noise- and Input-Matched Gmax-Core. IEEE transactions on microwave theory and techniques, vol.69, no.5, 2519-2530.
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A 173 GHz Amplifier With a 18.5 dB Power Gain in a 130 nm SiGe Process: A Systematic Design of High-Gain Amplifiers Above
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Park, Dae-Woong, Utomo, Dzuhri Radityo, Lam, Bao Huu, Hong, Jong-Phil, Lee, Sang-Gug. A 280-/300-GHz Three-Stage Amplifiers in 65-nm CMOS With 12-/9-dB Gain and 1.6/1.4% PAE While Dissipating 17.9 mW. IEEE microwave and wireless components letters : a publication of the IEEE Microwave Theory and Techniques Society, vol.28, no.1, 79-81.
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Choi, Kyung‐Sik, Park, Dae‐Woong, Utomo, Dzuhri Radityo, Lee, Sang‐Gug. 500 GHz CMOS heterodyne imager adopting fourth subharmonic passive mixer. Microwave and optical technology letters, vol.62, no.2, 683-687.
Zheng Wang, Pei-Yuan Chiang, Nazari, Peyman, Chun-Cheng Wang, Zhiming Chen, Heydari, Payam. A CMOS 210-GHz Fundamental Transceiver With OOK Modulation. IEEE journal of solid-state circuits, vol.49, no.3, 564-580.
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Proc Asia–Pacific Microw Conf (APMC) 265-GHz, 10-dB gain amplifier in 65-nm CMOS using on-wafer TRL calibration yagishita 2015 2 1
Bameri, Hadi, Momeni, Omeed. A High-Gain mm-Wave Amplifier Design: An Analytical Approach to Power Gain Boosting. IEEE journal of solid-state circuits, vol.52, no.2, 357-370.
Park, Dae-Woong, Utomo, Dzuhri Radityo, Lam, Bao Huu, Lee, Sang-Gug, Hong, Jong-Phil.
A 230–260-GHz Wideband and High-Gain Amplifier in 65-nm CMOS Based on Dual-Peak
Moghadami, Siavash, Ardalan, Shahab.
A 205 GHz Amplifier With 10.5 dB Gain and
Moghadami, Siavash, Isaac, Jacob, Ardalan, Shahab. A 0.2–0.3 THz CMOS Amplifier With Tunable Neutralization Technique. IEEE transactions on terahertz science and technology, vol.5, no.6, 1088-1093.
Proc IEEE Compound Semiconductor Integr Circuit Symp (CSICS) 190-260 GHz high-power, broadband PA’s in 250 nm InP HBT griffith 2015 1
Radisic, V, Deal, W R, Leong, K M K H, Mei, X B, Yoshida, W, Po-Hsin Liu, Uyeda, J, Fung, A, Samoska, L, Gaier, T, Lai, R. A 10-mW Submillimeter-Wave Solid-State Power-Amplifier Module. IEEE transactions on microwave theory and techniques, vol.58, no.7, 1903-1909.
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