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A Review: Inductively Coupled Plasma Reactive Ion Etching of Silicon Carbide 원문보기

Materials, v.15 no.1, 2022년, pp.123 -   

Racka-Szmidt, Katarzyna (Łukasiewicz Research Network—) ,  Stonio, Bartłomiej (Institute of Microelectronics and Photonics, Al. Lotnikó) ,  Żelazko, Jarosław (w 32) ,  Filipiak, Maciej (Jaroslaw.Zelazko@imif.lukasiewicz.gov.pl) ,  Sochacki, Mariusz (Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, 75 Koszykowa Str., 00-662 Warsaw, Poland)

Abstract AI-Helper 아이콘AI-Helper

The inductively coupled plasma reactive ion etching (ICP-RIE) is a selective dry etching method used in fabrication technology of various semiconductor devices. The etching is used to form non-planar microstructures—trenches or mesa structures, and tilted sidewalls with a controlled angle. Th...

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참고문헌 (60)

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