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NTIS 바로가기Applied physics reviews : APR, v.10 no.1, 2023년, pp.011402 -
Li, Qian (Beijing Key Lab of Cryo-Biomedical Engineering and Key Lab of Cryogenics, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences 1 , Beijing 100190, People's Republic of China) , Du, Bang-Deng (Beijing Key Lab of Cryo-Biomedical Engineering and Key Lab of Cryogenics, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences 1 , Beijing 100190, People's Republic of China) , Gao, Jian-Ye (Department of Biomedical Engineering, School of Medicine, Tsinghua University 2 , Beijing 100084, People's Republic of China) , Liu, Jing (Beijing Key Lab of Cryo-Biomedical Engineering and Key Lab of Cryogenics, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences 1 , Beijing 100190, People's Republic of China)
As a promising third-generation semiconductor, gallium oxide (Ga2O3) is currently facing bottleneck for its p-type doping. The doping process of conventional semiconductors usually introduces trace impurities, which is a major technical problem in the electronics industry. In this article, we concei...
J. Lumin. 235 118051 2021 10.1016/j.jlumin.2021.118051 Yellow emission from vertically integrated Ga2O3 doped with Er and Eu electroluminescent film
npj 2D Mater. Appl. 5 1 36 2021 10.1038/s41699-021-00219-y Gas-mediated liquid metal printing toward large-scale 2D semiconductors and ultraviolet photodetector
J. Appl. Phys. 124 220901 2018 10.1063/1.5062841 Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETs
IEEE. Electron Device Lett. 43 264 2022 10.1109/LED.2021.3133866 Over 1 GW/cm2 vertical Ga2O3 Schottky barrier diodes without edge termination
Appl. Phys. Lett. 120 073502 2022 10.1063/5.0069655 A trapping tolerant drain current based temperature measurement of β-Ga2O3 MOSFETs
IEEE Electron Device Lett. 66 3310 2019 10.1109/TED.2019.2924453 A performance comparison between β-Ga2O3 and GaN HEMTs
J. Semicond. 40 011804 2019 10.1088/1674-4926/40/1/011804 A review of β-Ga2O3 single crystal defects, their effects on device performance and their formation mechanism
ACS Appl. Mater. Interfaces 12 7310 2020 10.1021/acsami.9b19667 Monolithically integrated enhancement-mode and depletion-mode β-Ga2O3 MESFETs with graphene-gate architectures and their logic applications
Appl. Phys. Rev. 5 011301 2018 10.1063/1.5006941 A review of Ga2O3 materials, processing, and devices
Nanoscale Res. Lett. 13 290 2018 10.1186/s11671-018-2712-1 An overview of the ultrawide bandgap Ga2O3 semiconductor-based Schottky barrier diode for power electronics application
IEEE. Electron Device Lett. 37 902 2016 10.1109/LED.2016.2568139 3.8-MV/cm breakdown strength of MOVPE-grown Sn-doped β-Ga2O3 MOSFETs
Adv. Funct. Mater. 31 2010303 2021 10.1002/adfm.202010303 High performance β-Ga2O3 Schottky barrier transistors with large work function TMD gate of NbS2 and TaS2
Phys. Status. Solidi B 245 641 2008 10.1002/pssb.200743334 Doping asymmetry in wide-bandgap semiconductors: Origins and solutions
Appl. Phys. Lett. 112 173502 2018 10.1063/1.5025704 Demonstration of high mobility and quantum transport in modulation-doped β-(AlxGa1−x)2O3/Ga2O3 heterostructures
Phys. Rev. B 102 195207 2020 10.1103/PhysRevB.102.195207 Split Ga vacancies and the unusually strong anisotropy of positron annihilation spectra in β-Ga2O3
ACS Appl. Mater. Interfaces 11 32127 2019 10.1021/acsami.9b09166 Investigation of the mechanism for Ohmic contact formation in Ti/Al/Ni/Au contacts to β-Ga2O3 nanobelt field-effect transistors
Mater. Today Phys. 23 100643 2022 10.1016/j.mtphys.2022.100643 A general strategy to ultrasensitive Ga2O3 based self-powered solar-blind photodetectors
Mater. Today Phys. 17 100356 2021 10.1016/j.mtphys.2021.100356 Energy-driven multi-step structural phase transition mechanism to achieve high-quality p-type nitrogen-doped β-Ga2O3 films
Appl. Phys. Lett. 112 032108 2018 10.1063/1.5009423 On the feasibility of p-type Ga2O3
Appl. Phys. Lett. 113 062101 2018 10.1063/1.5034474 Donors and deep acceptors in β-Ga2O3
J. Appl. Phys. 113 053713 2013 10.1063/1.4790425 Origin of ferromagnetism in Cu-doped SnO2: A first-principles study
Mater. Today Commun. 25 101549 2020 10.1016/j.mtcomm.2020.101549 The influence of the Cu doping position on GaAs: First-principles calculations
Science. 358 332 2017 10.1126/science.aao4249 A liquid metal reaction environment for the room-temperature synthesis of atomically thin metal oxides
Adv. Mater. 33 2005544 2021 10.1002/adma.202005544 Liquid metals: A novel possibility of fabricating 2D metal oxides
Met. Sci. 12 411 1978 10.1179/030634578790434025 Thermal analysis of Ga-In-Sn system
Appl. Mater. Today 20 100722 2020 10.1016/j.apmt.2020.100722 Liquid metal enabled injectable biomedical technologies and applications
Angew. Chem., Int. Ed. 59 5002 2020 10.1002/anie.201916000 Compromising science by ignorant instrument calibration-Need to revisit half a century of published XPS data
Nat. Electron. 3 51 2020 10.1038/s41928-019-0353-8 Flexible two-dimensional indium tin oxide fabricated using a liquid metal printing technique
Adv. Mater. 33 2104793 2021 10.1002/adma.202104793 Doping process of 2D materials based on the selective migration of dopants to the interface of liquid metals
ACS Appl. Mater. Interfaces 10 9203 2018 10.1021/acsami.8b00009 Metallic bond-enabled wetting behavior at the liquid Ga/CuGa2 interfaces
ACS Appl. Mater. Interfaces 9 35977 2017 10.1021/acsami.7b10256 Gallium-based liquid metal amalgams: Transitional-state metallic mixtures (TransM2ixes) with enhanced and tunable electrical, thermal, and mechanical properties
J. Alloys Compd. 822 153537 2020 10.1016/j.jallcom.2019.153537 Anomalous pressure dependent phase diagram of liquid Ga-In alloys
Calphad 56 215 2017 10.1016/j.calphad.2017.01.010 Experimental investigation and thermodynamic calculations of the Ag-Ga-Sn phase diagram
Mater. Sci. Eng. B 176 846 2011 10.1016/j.mseb.2011.04.014 Optical and structural properties of Cu-doped β-Ga2O3 films
Nat. Electron. 4 277 2021 10.1038/s41928-021-00561-5 High-mobility p-type semiconducting two-dimensional β-TeO2
Adv. Opt. Mater. 10 2200925 2022 10.1002/adom.202200925 Atomically thin antimony-doped indium oxide nanosheets for optoelectronics
J. Hazard Mater. 415 125757 2021 10.1016/j.jhazmat.2021.125757 Plasma-induced oxygen vacancies enabled ultrathin ZnO films for highly sensitive detection of triethylamine
Sci. Rep. 6 1 32355 2016 10.1038/srep32355 Formation of oxygen vacancies and Ti3+ state in TiO2 thin film and enhanced optical properties by air plasma treatment
Appl. Phys. Lett. 105 023507 2014 10.1063/1.4890524 Oxygen vacancy tuned Ohmic-Schottky conversion for enhanced performance in β-Ga2O3 solar-blind ultraviolet photodetectors
Nano Res. 12 143 2019 10.1007/s12274-018-2193-7 Quasi-two-dimensional β-Ga2O3 field effect transistors with large drain current density and low contact resistance via controlled formation of interfacial oxygen vacancies
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