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NTIS 바로가기IEEE transactions on microwave theory and techniques, v.47 no.7 pt.2, 1999년, pp.1381 - 1384
Han, Seok Kil (Res. Dept., Korea Adv. Inst. of Sci. & Technol., Taejon, South Korea) , Ali, M.E. , Jung, Sang-Dong , Kang, Kwang-Yong , Fetterman, H.R.
We demonstrate the use of near-field fiber-optic probes in optical heterodyne characterization of high-speed devices. The submicrometer-size optical beam obtained from the fiber-optic probe was employed to selectively excite a tiny area of the device active region. Optical heterodyne measurements on heterojunction bipolar transistors were conducted at 1.3 μm with a difference frequency of 60 GHz. Significant response of the device with a signal-to-noise ratio of 25 dB was observed. The dc and ac photoresponse was also measured as a function of the distance between the fiber probe and the device-under-test. The data clearly showed distinguishable regimes of near- and far-field operation. The near-field high-frequency optical heterodyne technique as explored in this paper provides us with new capabilities that can be effectively utilized in the field of optical millimeter-wave interaction in ultrafast devices.
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