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Journal of the Electrochemical Society : JES, v.134 no.12, 1987년, pp.3143 - 3144
Pong, W. (Hawaii Natural Energy Institute and Department of Physics, University of Hawaii, Honolulu, Hawaii 96822) , He, Z. X. (Hawaii Natural Energy Institute and Department of Physics, University of Hawaii, Honolulu, Hawaii 96822) , Root, D. (Hawaii Natural Energy Institute and Department of Physics, University of Hawaii, Honolulu, Hawaii 96822)
Spectral photocurrent measurements were made on a novel semiconductor photoelectrode composed of a p-type Si wafer and a thin overlayer of n-type cubic SiC. The photocurrent was measured with dispersed light incident on the SiC/water interface. The peak of the spectral response was found at photon energy of approximately 2. 4 ev. The results show that electrons can be photoinjected into the water from the Si-SiC electrode without the application of an external bias voltage. The decrease in photocurrent for photon energies above 2. 4 ev is attributed to the onset of photoexcitation and electron-hole separation near the SiC/water interface.(Author abstract)
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