다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
NTIS 바로가기
Journal of applied physics, v.53 no.1, 1982년, pp.568 - 575
Watanabe, Kenjirou (Sony Research Center, Fujitsuka-cho, Hodogaya, Yokohama, Japan) , Wakayama, Shouji (Sony Research Center, Fujitsuka-cho, Hodogaya, Yokohama, Japan)
AI-Helper
The composition and conduction of silicon nitride film formed by the reaction of SiH2Cl2 and NH3 at a low pressure were studied. In the range investigated, this film is amorphous N-rich silicon nitride no matter what the growth conditions. Conduction at room temperature in a steady state was investi...
J. Electrochem. Soc. 114 733 1967 10.1149/1.2426719
J. Electrochem. Soc. 115 273 1968 10.1149/1.2411130
J. Appl. Phys. 42 451 1971 10.1063/1.1659622
Jpn. J. Appl. Phys. 8 876 1969 10.1143/JJAP.8.876
J. Phys. Chem. Solids 32 1909 1971 10.1016/S0022-3697(71)80156-7
J. Electrochem. Soc. 119 1248 1972 10.1149/1.2404452
J. Appl. Phys. 38 2951 1967 10.1063/1.1710030
J. Electrochem. Soc. 123 535 1976 10.1149/1.2132872
J. Appl. Phys. 49 2756 1978 10.1063/1.325200
J. Appl. Phys. 43 1178 1972 10.1063/1.1661233
Thin Solid Films 36 157 1976 10.1016/0040-6090(76)90428-4
J. Appl. Phys. 48 329 1977 10.1063/1.323382
Appl. Phys. Lett. 27 34 1975 10.1063/1.88256
J. Phys. D 7 1531 1974 10.1088/0022-3727/7/11/314
Appl. Phys. Lett. 29 617 1976 10.1063/1.89164
Phys. Status Solidi (a) 26 489 1974 10.1002/pssa.2210260211
J. Electrochem. Soc. 118 1341 1971 10.1149/1.2408318
J. Appl. Phys. 46 5236 1975 10.1063/1.321592
Jpn. J. Appl. Phys. 11 555 1972 10.1143/JJAP.11.555
Solid-State Electron. 16 811 1973 10.1016/0038-1101(73)90178-0
Appl. Phys. Lett. 26 94 1975 10.1063/1.88093
J. Appl. Phys. 48 2955 1977 10.1063/1.324109
J. Appl. Phys. 47 667 1976 10.1063/1.322631
Appl. Phys. Lett. 13 275 1968 10.1063/1.1652607
Copyright KISTI. All Rights Reserved.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.