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NTIS 바로가기Journal of the Electrochemical Society : JES, v.131 no.5, 1984년, pp.1135 - 1140
Hosoya, Tetsuo (Nippon Telegraph and Telephone Public Corporation, Atsugi Electrical Communication Laboratory, 1839, Ono, Atsugi‐) , Ohfuji, Shin‐ichi (shi, Kanagawa Prefecture, 243‐) , Shibata, Toshitaka (01 Japan)
A taper dry etching technique for molybdenum films is proposed. The dry etching characteristics of oxygen-doped Mo films in a CCl//4-O//2 discharge are studied. It is found that oxygen-doped Mo films are etched at a higher rate than oxygen-undoped Mo film and that, in oxygen-doped Mo films, undercutting occurs differently from oxygen-undoped Mo film. Making us of the Mo etching characteristics, tapered Mo patterns with little linewidth loss to resist patterns are obtained by plasma etching of the Mo double layer, namely an oxygen-doped Mo film over an oxygen-undoped Mo film. The taper angle is varied from 40 degree to 60 degree by varying the thickness ratio of the oxygen-doped Mo film to the total Mo double layer. This technique promises to improve an interconnection yield in LSI's through reduction of wiring disconnection or shorts over the tapered-Mo steps.
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