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NTIS 바로가기IEEE journal on selected topics in quantum electronics : a publication of the IEEE Communications Society, v.4 no.4, 1998년, pp.624 - 628
Choi, J. (Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA) , Han, S.M. , Shah, S.I. , Choi, S.G. , Woo, D.H. , Lee, S. , Kim, S.H. , Lee, J.I. , Kang, K.N. , Cho, J.
Dielectric-cap quantum-well disordering of GaAs-AlGaAs multiple-quantum-well (MQW) structure was carried out using SiNx capping layer grown by plasma enhanced chemical vapor deposition. There was a dependence of quantum-well disordering (QWD) on the hydrogen content in the SiNx capping layer, which was varied by changing the NH3 flow rate during the film growth. The degree of QWD increased with increasing of hydrogen content in the Six capping layer. The degree of QWD with SIN, capping layer grown at higher NH3 flow rate was comparable to that with a 300-nm-thick SiO2 capping layer at the same rapid thermal annealing condition. This result implies the possibility of obtaining spatially selective disordered MQW structure using SiNx capping layers grown at different NH3 flow rates. The effect of different SiNx capping layers on QWD was characterized semiquantitatively by introducing relative vacancy density.
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