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NTIS 바로가기Semiconductors, v.41 no.2, 2007년, pp.223 - 226
Blynskii, V. I. , Vasileuskii, Yu. G. , Malyshev, S. A. , Chizh, A. L.
AbstractSilicon photodiodes with a grid-structured p-region were studied. Analytical expressions for the capacitance of such photodiodes were derived. The influence of the cell sizes and diffusion length of minority carriers on the sensitivity of the silicon grid photodiode was analyzed in a spectra...
V. I. Blynskiĭ, E. G. Lozitskiĭ, and P. I. Okun’, Élektron. Prom-st, No. 1, 12 (2004).
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