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NTIS 바로가기IEEE microwave magazine, v.8 no.3, 2007년, pp.54 - 59
Brown, E.R. (California Univ., Santa Barbara, CA) , Young, A.C. (California Univ., Santa Barbara, CA) , Zimmerman, J. (California Univ., Santa Barbara, CA) , Kazemi, H. , Gossard, A.C.
In conclusion, heteroepitaxial technology has delivered a new device building block for the microwave and millimeter-wave toolbox - a single-crystal Schottky barrier diode made from a lattice matched combination of a semimetal (ErAs) and a semiconductor (InAlGaAs). This article has demonstrated how ...
Young, A. C., Zimmerman, J. D., Brown, E. R., Gossard, A. C.. Semimetal-semiconductor rectifiers for sensitive room-temperature microwave detectors. Applied physics letters, vol.87, no.16, 163506-.
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Zimmerman, Jeramy D., Brown, Elliott R., Gossard, Arthur C.. Tunable all epitaxial semimetal-semiconductor Schottky diode system: ErAs on InAlGaAs. Journal of vacuum science & technology. processing, measurement, and phenomena : an official journal of the American Vacuum Society. B, Microelectronics and nanometer structures, vol.23, no.5, 1929-.
Young, A. C., Zimmerman, J. D., Brown, E. R., Gossard, A. C.. 1∕ f noise in all-epitaxial metal-semiconductor diodes. Applied physics letters, vol.88, no.7, 073518-.
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