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NTIS 바로가기Electronics letters, v.43 no.18, 2007년, pp.981 - 983
Yang, J.G. (Korea Adv. Inst. of Sci.&Technol., Daejeon) , Choi, S. (Korea Adv. Inst. of Sci.&Technol., Daejeon) , Yang, K. (Korea Adv. Inst. of Sci.&Technol., Daejeon)
Fully integrated single-pole-double-throw and single-pole-triple-throw InP/InGaAs PIN switches have been designed and fabricated using a newly proposed BCB-based 3D MMIC technology. The chip sizes of the fabricated InP/InGaAs PIN switches, which show good and broadband RF characteristics, have been ...
Lin, Kun-You, Wang, Yu-Jiu, Niu, Dow-Chih, Wang, Huei. Millimeter-wave MMIC single-pole-double-throw passive HEMT switches using impedance-transformation networks. IEEE transactions on microwave theory and techniques, vol.51, no.4, 1076-1085.
Hieda, M., Nakahara, K., Miyaguchi, K., Kurusu, H., Iyama, Y., Takagi, T., Urasaki, S.. High-isolation series-shunt FET SPDT switch with a capacitor canceling FET parasitic inductance. IEEE transactions on microwave theory and techniques, vol.49, no.12, 2453-2458.
IEEE Gallium Arsenide Integrated Circuit Symp. Ingram 289 1996
Levy 3 2019 2003
Lee, Jar-Lon, Zych, D., Reese, E., Drury, D.M.. Monolithic 2-18 GHz low loss, on-chip biased PIN diode switches. IEEE transactions on microwave theory and techniques, vol.43, no.2, 250-256.
Choi, Sunkyu, Jeong, Yongsik, Yang, Kyounghoon. Low DC-power ku-band differential VCO based on an RTD/HBT MMIC technology. IEEE microwave and wireless components letters : a publication of the IEEE Microwave Theory and Techniques Society, vol.15, no.11, 742-744.
Proc. IEE Conf. on InP and Related Materials Yang 133 2007
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