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Nano letters : a journal dedicated to nanoscience and nanotechnology, v.9 no.2, 2009년, pp.725 - 730
Ho, Johnny C. (Department of Electrical Engineering and Computer Sciences, Berkeley Sensor and Actuator Center, University of California at Berkeley, Berkeley, California 94720, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, SEMATECH, Austin, Texas 78741, SVTC Technologies, Austin, Texas 78741, and Frontier Semiconductor, Inc., San Jose, California 95112) , Yerushalmi, Roie (Department of Electrical Engineering and Computer Sciences, Berkeley Sensor and Actuator Center, University of California at Berkeley, Berkeley, California 94720, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, SEMATECH, Austin, Texas 78741, SVTC Technologies, Austin, Texas 78741, and Frontier Semiconductor, Inc., San Jose, California 95112) , Smith, Gregory (Department of Electrical Engineering and Computer Sciences, Berkeley Sensor and Actuator Center, University of California at Berkeley, Berkeley, California 94720, Materials Sciences Division, Lawrence Berkeley Nati) , Majhi, Prashant , Bennett, Joseph , Halim, Jeffri , Faifer, Vladimir N. , Javey, Ali
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We report the formation of sub-5 nm ultrashallow junctions in 4 in. Si wafers enabled by the molecular monolayer doping of phosphorus and boron atoms and the use of conventional spike annealing. The junctions are characterized by secondary ion mass spectrometry and noncontact sheet resistance measur...
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