Raman scattering of ZnSe layers grown on nearly lattice matched InxGa1-xAs substrates (x = 0 - 0.092) by using molecular beam epitaxy (MBE) have been investigated. The Raman shift of the ZnSe longitudinal optical (LO) phonon stays nearly constant while the line width Γ increases with increasing indium molar fraction of the substrates. The results are analyzed based on the two-parameter spatial correlation model. The intrinsic line width of ZnSe LO is found to depend strongly on the spatial correlation length of the substrate.
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