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NTIS 바로가기光學學報 = Acta optica Sinica, v.26 no.5, 2006년, pp.773 - 776
Liu, Shiliang (Shanghai Institute of Optics and Fine Mechanics, The Chinese Academy of Sciences) , Zhou, Shengming (Shanghai Institute of Optics and Fine Mechanics, The Chinese Academy of Sciences) , Li, Shuzhi (Shanghai Institute of Optics and Fine Mechanics, The Chinese Academy of Sciences) , Wang, Yinzhen (Shanghai Institute of Optics and Fine Mechanics, The Chinese Academy of Sciences) , Xu, Jun (Shanghai Institute of Optics and Fine Mechanics, The Chinese Academy of Sciences)
In order to find a new substrate which can probably substitute the sapphire for GaN epitaxy, a single phase and polycrystalline TLiAlO2 layer has been prepared by vapor transport equilibration (VTE) for 48 hours at 1000℃, 1030 ℃, 1050 ℃, 1070℃ and 1100 ℃, respectively. X-ray diffraction (XRD) and sc...
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