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IEEE transactions on electron devices, v.57 no.2, 2010년, pp.466 - 473
Tsuji, Y. (Device Platforms Res. Labs., NEC Corp., Sagamihara, Japan) , Terai, M. (Device Platforms Res. Labs., NEC Corp., Sagamihara, Japan) , Fujieda, S. (Device Platforms Res. Labs., NEC Corp., Sagamihara, Japan) , Syo, T. (Microcomput. Oper. Unit, NEC Electron. Corp., Sagamihara, Japan) , Saito, T. (Microcomput. Oper. Unit, NEC Electron. Corp., Sagamihara, Japan) , Ando, K. (Microcomput. Oper. Unit, NEC Electron. Corp., Sagamihara, Japan)
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We profiled the lateral charge distribution in a split-gate silicon-oxide-nitride-oxide-silicon (SONOS) memory device with a short gate length (~ 40 nm) after channel hot-electron (CHE) injection or band-to-band tunneling-induced hot-hole (BTBT-HH) injection. The profiles were drawn from measurement...
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