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NTIS 바로가기Journal of physics. Conference series, v.209 no.1, 2010년, pp.012014 -
Bennett, S E , Clifton, P H , Ulfig, R M , Kappers, M J , Barnard, J S , Humphreys, C J , Oliver, R A
P-type conducting layers are critical in GaN-based devices such as LEDs and laser diodes. Such layers are often produced by doping GaN with Mg, but the hole concentration can be enhanced using AlGaN/GaN p-type superlattices by exploiting the built-in polarisation fields. A Mg-doped AlGaN/GaN superla...
Amano, Hiroshi, Kito, Masahiro, Hiramatsu, Kazumasa, Akasaki, Isamu. P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI). Japanese journal of applied physics. Part 2, Letters, vol.28, no.12, L2112-.
Miller, M.K., Russell, K.F., Thompson, G.B.. Strategies for fabricating atom probe specimens with a dual beam FIB. Ultramicroscopy, vol.102, no.4, 287-298.
Thompson, K, Gorman, B, Larson, D, Leer, B van, Hong, L. Minimization of Ga Induced FIB Damage Using Low Energy Clean-up. Microscopy and microanalysis : the official journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada, vol.12, no.suppl2, 1736-1737.
Vennéguès, P., Benaissa, M., Beaumont, B., Feltin, E., De Mierry, P., Dalmasso, S., Leroux, M., Gibart, P.. Pyramidal defects in metalorganic vapor phase epitaxial Mg doped GaN. Applied physics letters, vol.77, no.6, 880-882.
Liliental-Weber, Z., Benamara, M., Swider, W., Washburn, J., Grzegory, I., Porowski, S., Lambert, D. J. H., Eiting, C. J., Dupuis, R. D.. Mg-doped GaN: Similar defects in bulk crystals and layers grown on Al2O3 by metal-organic chemical-vapor deposition. Applied physics letters, vol.75, no.26, 4159-4161.
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