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Semiconductor science and technology, v.25 no.5, 2010년, pp.055012 -
Gong, You-Pin (Author to whom any correspondence should be addressed) , Li, Ai-Dong , Li, Xue-Fei , Li, Hui , Zhai, Hai-Fai , Wu, Di
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HfO2, Al2O3 and HfO2/Al2O3 (AHO) nanolaminates with various Al/Hf ratios (including 1:3.0, 1:2.1 and 1:1.3) were fabricated on S-passivated GaAs substrates by atomic layer deposition (ALD). The interface structure and band alignments of various dielectric/GaAs structures have been investigated syste...
Yang, Z. K., Lee, W. C., Lee, Y. J., Chang, P., Huang, M. L., Hong, M., Hsu, C.-H., Kwo, J.. Cubic HfO2 doped with Y2O3 epitaxial films on GaAs (001) of enhanced dielectric constant. Applied physics letters, vol.90, no.15, 152908-.
Shahrjerdi, D., Akyol, T., Ramon, M., Garcia-Gutierrez, D. I., Tutuc, E., Banerjee, S. K.. Self-aligned inversion-type enhancement-mode GaAs metal-oxide-semiconductor field-effect transistor with Al2O3 gate dielectric. Applied physics letters, vol.92, no.20, 203505-.
Dalapati, Goutam Kumar, Sridhara, Aaditya, Wong, Andrew See Weng, Chia, Ching Kean, Lee, Sung Joo, Chi, Dongzhi. Characterization of sputtered TiO2 gate dielectric on aluminum oxynitride passivated p-GaAs. Journal of applied physics, vol.103, no.3, 034508-.
Lin, H. C., Yang, T., Sharifi, H., Kim, S. K., Xuan, Y., Shen, T., Mohammadi, S., Ye, P. D.. Enhancement-mode GaAs metal-oxide-semiconductor high-electron-mobility transistors with atomic layer deposited Al2O3 as gate dielectric. Applied physics letters, vol.91, no.21, 212101-.
Chen, P. T., Sun, Y., Kim, E., McIntyre, P. C., Tsai, W., Garner, M., Pianetta, P., Nishi, Y., Chui, C. O.. Hf O 2 gate dielectric on (NH4)2S passivated (100) GaAs grown by atomic layer deposition. Journal of applied physics, vol.103, no.3, 034106-.
Xuan, Yi, Lin, Hung-Chun, Ye, Peide D..
Simplified Surface Preparation for GaAs Passivation Using Atomic Layer-Deposited High-
2009 10.1088/0268-1242/24/9/095017 24 095017 0268-1242 Semicond. Sci. Technol. Bhan R K
Dalapati, Goutam Kumar, Tong, Yi, Loh, Wei Yip, Mun, Hoe Keat, Cho, Byung Jin. Impact of interfacial layer control using Gd2O3 in HfO2 gate dielectric on GaAs. Applied physics letters, vol.90, no.18, 183510-.
2009 10.1088/0268-1242/24/8/085026 24 085026 0268-1242 Semicond. Sci. Technol. Das P S
Kim, Hyoung-Sub, Ok, Injo, Zhang, Manhong, Choi, Changhwan, Lee, Tackhwi, Zhu, Feng, Thareja, Gaurav, Yu, Lu, Lee, Jack C.. Ultrathin HfO2 (equivalent oxide thickness=1.1nm) metal-oxide-semiconductor capacitors on n-GaAs substrate with germanium passivation. Applied physics letters, vol.88, no.25, 252906-.
Yang, T., Xuan, Y., Zemlyanov, D., Shen, T., Wu, Y. Q., Woodall, J. M., Ye, P. D., Aguirre-Tostado, F. S., Milojevic, M., McDonnell, S., Wallace, R. M.. Interface studies of GaAs metal-oxide-semiconductor structures using atomic-layer-deposited HfO2∕Al2O3 nanolaminate gate dielectric. Applied physics letters, vol.91, no.14, 142122-.
Aguirre-Tostado, F. S., Milojevic, M., Choi, K. J., Kim, H. C., Hinkle, C. L., Vogel, E. M., Kim, J., Yang, T., Xuan, Y., Ye, P. D., Wallace, R. M.. S passivation of GaAs and band bending reduction upon atomic layer deposition of HfO2/Al2O3 nanolaminates. Applied physics letters, vol.93, no.6, 061907-.
Hinkle, C. L., Sonnet, A. M., Vogel, E. M., McDonnell, S., Hughes, G. J., Milojevic, M., Lee, B., Aguirre-Tostado, F. S., Choi, K. J., Kim, H. C., Kim, J., Wallace, R. M.. GaAs interfacial self-cleaning by atomic layer deposition. Applied physics letters, vol.92, no.7, 071901-.
Lee, Hang Dong, Feng, Tian, Yu, Lei, Mastrogiovanni, Daniel, Wan, Alan, Gustafsson, Torgny, Garfunkel, Eric. Reduction of native oxides on GaAs during atomic layer growth of Al2O3. Applied physics letters, vol.94, no.22, 222108-.
Cheng, Chao-Ching, Chien, Chao-Hsin, Luo, Guang-Li, Yang, Chun-Hui, Chang, Ching-Chih, Chang, Chun-Yen, Kei, Chi-Chung, Hsiao, Chien-Nan, Perng, Tsong-Pyng. Effects of interfacial sulfidization and thermal annealing on the electrical properties of an atomic-layer-deposited Al2O3 gate dielectric on GaAs substrate. Journal of applied physics, vol.103, no.7, 074102-.
Lebedev, Mikhail V., Mayer, Thomas, Jaegermann, Wolfram. Sulfur adsorption at GaAs(100) from solution: role of the solvent in surface chemistry. Surface science, vol.547, no.1, 171-183.
Yang, K.J., Hu, Chenming. MOS capacitance measurements for high-leakage thin dielectrics. IEEE transactions on electron devices, vol.46, no.7, 1500-1501.
Koveshnikov, S., Adamo, C., Tokranov, V., Yakimov, M., Kambhampati, R., Warusawithana, M., Schlom, D. G., Tsai, W., Oktyabrsky, S.. Thermal stability of electrical and structural properties of GaAs-based metal-oxide-semiconductor capacitors with an amorphous LaAlO3 gate oxide. Applied physics letters, vol.93, no.1, 012903-.
Suri, Rahul, Lichtenwalner, Daniel J., Misra, Veena. Impact of elemental arsenic on electrical characteristics of metal-oxide-semiconductor capacitors on GaAs using atomic-layer deposited HfO2 gate dielectric. Applied physics letters, vol.92, no.24, 243506-.
Curreem, K. K. S., Lee, P. F., Wong, K. S., Dai, J. Y., Zhou, M. J., Wang, J., Li, Quan. Comparison of interfacial and electrical characteristics of HfO2 and HfAlO high-k dielectrics on compressively strained Si1−xGex. Applied physics letters, vol.88, no.18, 182905-.
Mahapatra, R., Chakraborty, Amit K., Horsfall, A. B., Wright, N. G., Beamson, G., Coleman, Karl S.. Energy-band alignment of HfO2∕SiO2∕SiC gate dielectric stack. Applied physics letters, vol.92, no.4, 042904-.
Yu, H.Y., Li, M.F., Kwong, D.L.. ALD (HfO2)x(Al2O3)1−x high-k gate dielectrics for advanced MOS devices application. Thin solid films, vol.462, 110-113.
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