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NTIS 바로가기Physica E, Low-dimensional systems & nanostructures, v.43 no.6, 2011년, pp.1166 - 1170
Kumar, R. Saravana (PG and Research Department of Physics, Kongunadu Arts and Science College (Autonomous), Coimbatore 641 029, Tamil Nadu, India) , Sathyamoorthy, R. (PG and Research Department of Physics, Kongunadu Arts and Science College (Autonomous), Coimbatore 641 029, Tamil Nadu, India) , Sudhagar, P. (Energy Materials Laboratory, Department of Chemical Engineering, Hanyang University, Seoul 133-791, South Korea) , Matheswaran, P. (PG and Research Department of Physics, Kongunadu Arts and Science College (Autonomous), Coimbatore 641 029, Tamil Nadu, India) , Hrudhya, C.P. (PG and Research Department of Physics, Kongunadu Arts and Science College (Autonomous), Coimbatore 641 029, Tamil Nadu, India) , Kang, Yong Soo (Energy Materials Laboratory, Department of Chemical Engineering, Hanyang University, Seoul 133-791, South Korea)
AbstractThe critical role that dopants play in semiconductor devices has stimulated research on the properties and the potential applications of semiconductor nanocrystals. Hence the investigation of the role of dopant concentration on the properties of semiconductor nanoparticles is very important ...
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