다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
NTIS 바로가기
IEEE photonics technology letters : a publication of the IEEE Laser and Electro-optics Society, v.21 no.19, 2009년, pp.1441 - 1443
Ping-Wei Huang (Mater. Sci.&Eng. Dept., Nat. Chiao Tung Univ., Hsinchu, Taiwan) , Wu, Y.C.S. (Mater. Sci.&Eng. Dept., Nat. Chiao Tung Univ., Hsinchu, Taiwan)
AI-Helper
A periodic GaP-dish mirror structure was introduced into AlGaInP light-emitting diodes (LEDs) through wet etching and Si wafer bonding process. It was found that the performance of these GaP-dish LEDs was better than that of conventional LED transferred to Si substrate (LED-C). In addition, the outp...
Lee, Y.J., Tseng, H.C., Kuo, H.C., Wang, S.C., Chang, C.W., Hsu, T.C., Yang, Y.L., Hsieh, M.H., Jou, M.J., Lee, B.J.. Improvement in light-output efficiency of AlGaInP LEDs fabricated on stripe patterned epitaxy. IEEE photonics technology letters : a publication of the IEEE Laser and Electro-optics Society, vol.17, no.12, 2532-2534.
Kambayash, Toshio, Kitahara, Chiyuki, Iga, Kenichi. Chemical Etching of InP and GaInAsP for Fabricating Laser Diodes and Integrated Optical Circuits. Japanese journal of applied physics, vol.19, no.1, 79-85.
Wu, Yew Chung Sermon, Huang, Ping-Wei. Effect of Ni Thin Film on the Reflectivity of ITO/Ag Mirrors of GaN Light-Emitting Diodes. Electrochemical and solid-state letters, vol.11, no.11, J82-.
Hsu, Shun-Cheng, Wuu, Dong-Sing, Lee, Chong-Yi, Su, Juh-Yuh, Horng, Ray-Hua.
High-Efficiency 1-mm
Vanderwater, D.A., Tan, I.-H., Hofler, G.E., Defevere, D.C., Kish, F.A.. High-brightness AlGaInP light emitting diodes. Proceedings of the IEEE, vol.85, no.11, 1752-1764.
Huh, Chul, Lee, Kug-Seung, Kang, Eun-Jeong, Park, Seong-Ju. Improved light-output and electrical performance of InGaN-based light-emitting diode by microroughening of the p-GaN surface. Journal of applied physics, vol.93, no.11, 9383-9385.
Windisch, R., Dutta, B., Kuijk, M., Knobloch, A., Meinlschmidt, S., Schoberth, S., Kiesel, P., Borghs, G., Dohler, G.H., Heremans, P.. 40% efficient thin-film surface-textured light-emitting diodes by optimization of natural lithography. IEEE transactions on electron devices, vol.47, no.7, 1492-1498.
Horng, Ray-Hua, Wuu, Dong-Sing, Wei, Sun-Chin, Tseng, Chung-Yang, Huang, Man-Fang, Chang, Kuo-Hsiung, Liu, Pin-Hui, Lin, Kun-Chuan. Wafer-Bonded AlGaInP/Au/AuBe/SiO2/Si Light-Emitting Diodes. Japanese journal of applied physics. Part 1, Regular papers, short notes and review papers, vol.39, no.b4, 2357-2359.
Sugawara, H., Itaya, K., Hatakoshi, G.. Characteristics of a distributed Bragg reflector for the visible-light spectral region using InGaAlP and GaAs: Comparison of transparent- and loss-type structures. Journal of applied physics, vol.74, no.5, 3189-3193.
Gessmann, T., Schubert, E.F., Graff, J.W., Streubel, K., Karnutsch, C.. Omnidirectional reflective contacts for light-emitting diodes. IEEE electron device letters : a publication of the IEEE Electron Devices Society, vol.24, no.11, 683-685.
Peng, Wei Chih, Wu, YewChung Sermon. High-power AlGaInP light-emitting diodes with metal substrates fabricated by wafer bonding. Applied physics letters, vol.84, no.11, 1841-1843.
Schnitzer, I., Yablonovitch, E., Caneau, C., Gmitter, T. J., Scherer, A.. 30% external quantum efficiency from surface textured, thin-film light-emitting diodes. Applied physics letters, vol.63, no.16, 2174-2176.
High Brightness Light Emitting Diodes stringfellow 1997
10.1117/12.527952
*원문 PDF 파일 및 링크정보가 존재하지 않을 경우 KISTI DDS 시스템에서 제공하는 원문복사서비스를 사용할 수 있습니다.
Copyright KISTI. All Rights Reserved.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.