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NTIS 바로가기IEEE electron device letters : a publication of the IEEE Electron Devices Society, v.32 no.8, 2011년, pp.1113 - 1115
Jinil Lee (Semicond. R&D Center, Samsung Electron. Co., Ltd., Yongin, South Korea) , Sunglae Cho (Semicond. R&D Center, Samsung Electron. Co., Ltd., Yongin, South Korea) , Dongho Ahn (Semicond. R&D Center, Samsung Electron. Co., Ltd., Yongin, South Korea) , Mansug Kang (Semicond. R&D Center, Samsung Electron. Co., Ltd., Yongin, South Korea) , Seokwoo Nam (Semicond. R&D Center, Samsung Electron. Co., Ltd., Yongin, South Korea) , Ho-Kyu Kang (Semicond. R&D Center, Samsung Electron. Co., Ltd., Yongin, South Korea) , Chilhee Chung (Semicond. R&D Center, Samsung Electron. Co., Ltd., Yongin, South Korea)
We first present chemical-vapor-deposited GeBiTe (CVD GBT) in a confined cell for high-performance phase-change random access memory (PRAM). Due to the fast crystallization of GBT, we were able to reduce the speed to less than 26 ns while maintaining endurance characteristics up to 109 cycles. Our r...
Rajesh, R., Philip, J.. Carrier-type reversal in metal modified chalcogenide glasses: Results of thermal transport measurements. Journal of applied physics, vol.93, no.12, 9737-9742.
Elliott, S. R., Steel, A. T.. Mechanism for Doping in Bi Chalcogenide Glasses. Physical review letters, vol.57, no.11, 1316-1319.
Lee, Tae-Yon, Kim, Cheolkyu, Kang, Younseon, Suh, Dong-Seok, Kim, Kijoon H. P., Khang, Yoonho. Rapid crystallization of GeTe-Bi2Te3 mixed layer. Applied physics letters, vol.92, no.10, 101908-.
Zheng, J F, Reed, J, Schell, C, Czubatyj, W, Sandoval, R, Fournier, J, Li, W, Hunks, W, Dennison, C, Hudgens, S, Lowrey, T.
MOCVD
Russo, U., Ielmini, D., Redaelli, A., Lacaita, A.L.. Modeling of Programming and Read Performance in Phase-Change Memories—Part I: Cell Optimization and Scaling. IEEE transactions on electron devices, vol.55, no.2, 506-514.
VLSI Symp Tech Dig High performance PRAM cell scalable to sub-20 nm technology with below $\hbox{4}\hbox{F}^{2}$ cell size, extendable to DRAM applications kim 2010 203
Simpson, R. E., Hewak, D. W., Fons, P., Tominaga, J., Guerin, S., Hayden, B. E.. Reduction in crystallization time of Sb:Te films through addition of Bi. Applied physics letters, vol.92, no.14, 141921-.
Yeo, E.G., Shi, L.P, Zhao, R, Chong, T.C.. Investigation on Ultra-high Density and High Speed Non-volatile Phase Change Random Access Memory (PCRAM) by Material Engineering. Materials Research Society symposia proceedings, vol.918, 0918-H05-05-G06-05-.
Park, Tae-Jin, Choi, Se-Young, Kang, Myung-Jin. Phase transition characteristics of Bi/Sn doped Ge2Sb2Te5thin film for PRAM application. Thin solid films, vol.515, no.12, 5049-5053.
Wang, K., Steimer, C., Wamwangi, D., Ziegler, S., Wuttig, M., Tomforde, J., Bensch, W.. Influence of doping upon the phase change characteristics of Ge2Sb2Te5. Microsystem technologies : sensors, actuators, systems integration, vol.13, no.2, 203-206.
Matsunaga, Toshiyuki, Yamada, Noboru. Crystallographic Studies on High-Speed Phase-Change Materials Used for Rewritable Optical Recording Disks. Japanese journal of applied physics. Part 1, Regular papers, short notes and review papers, vol.43, no.b7, 4704-4712.
Burr, Geoffrey W., Breitwisch, Matthew J., Franceschini, Michele, Garetto, Davide, Gopalakrishnan, Kailash, Jackson, Bryan, Kurdi, Bülent, Lam, Chung, Lastras, Luis A., Padilla, Alvaro, Rajendran, Bipin, Raoux, Simone, Shenoy, Rohit S.. Phase change memory technology. Journal of vacuum science and technology. materials, processing, measurement, & phenomena : JVST B. B, Nanotechnology & microelectronics, vol.28, no.2, 223-262.
Proc EPCOS Development lines for phase change memory bez 2008
Sun, C W, Youm, M S, Kim, Y T. Crystallization behavior of non-stoichiometric Ge–Bi–Te ternary phase change materials for PRAM application. Journal of physics, an Institute of Physics journal. Condensed matter, vol.19, no.44, 446004-.
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