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11. Rad. Eff. W. Heiland 13 87 1972 10.1080/00337577208231164 W. Heiland andE. Taglauer,ibid (in press). 

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14. P. Sigmund 215 1967 Proc. of the Int.Conf. on Application of Ion Beams to Semiconductor Technology P. Sigmund andJ. B. Sanders,in Proc. of the Int.Conf. on Application of Ion Beams to Semiconductor Technology, Editions Ophrys, Paris (1967), p. 215;K. B. Winterbon, P. Sigmund, andJ. B. Sanders Mat. Fys. Medd. Dan. Vid. Selsk. 37 (14) (1970);P. Sigmund, M. T. Matthies, andD. L. Phillips,Rad. Eff. 11 (1971) 34;K. B. Winterbon,Rad Eff. 13 (1972) 215. 

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19. N. Hermanne,Rad. Eff. (in press). 

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