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Solid-state electronics, v.72, 2012년, pp.1 - 3
Xu, X.B. (Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an Shaanxi 710071, PR China) , Zhang, H.M. , Hu, H.Y. , Qu, J.T.
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The standard Early voltage of the SGP model is generalized for SiGe NPN heterojunction bipolar transistors (HBTs). A new compact formulation of the Early voltage compatible with the SGP model is presented. The impact of the Ge profile on Early effect is shown and validated by experiments. T...
10.1109/IEDM.2010.5703452 Heinemann B, Barth R, Bolze D, Drews J, Fischer GG, Fox A, et al. SiGe HBT technology with fT/fmax of 300GHz/500GHz and 2.0 ps CML gate delay. Electron devices meeting (IEDM) 2010 IEEE international 2010: 30.5.1-5.4.
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