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NTIS 바로가기IEEE transactions on microwave theory and techniques, v.60 no.2, 2012년, pp.340 - 351
Bonhoon Koo (Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol. (KAIST), Daejeon, South Korea) , Yoosam Na (Ultra Mobile Solution Lab., Samsung Electro-Mech. Co., Ltd., Suwon, South Korea) , Songcheol Hong (Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol. (KAIST), Daejeon, South Korea)
This paper presents a highly linear differential cascode CMOS power amplifier (PA) with gate bias circuits in Common Source (CS) and Common Gate (CG) amplifiers. The proposed Class-D bias circuit at the gate of a CS amplifier injects a reshaped envelope signal only when the envelope signal is above ...
Fager, C., Pedro, J.C., de Carvalho, N.B., Zirath, H., Fortes, F., Rosario, M.J.. A comprehensive analysis of IMD behavior in RF CMOS power amplifiers. IEEE journal of solid-state circuits, vol.39, no.1, 24-34.
De Carvalho, N.B., Pedro, J.C.. Large- and small-signal IMD behavior of microwave power amplifiers. IEEE transactions on microwave theory and techniques, vol.47, no.12, 2364-2374.
Intermodulation Distortion in Microwave and Wireless Circuits pedro 2003
Ramadan, Alaaeddine, Reveyrand, Tibault, Martin, Audrey, Nebus, Jean-Michel, Bouysse, Philippe, Lapierre, Luc, Villemazet, Jean-François, Forestier, Stéphane. Two-Stage GaN HEMT Amplifier With Gate–Source Voltage Shaping for Efficiency Versus Bandwidth Enhancements. IEEE transactions on microwave theory and techniques, vol.59, no.3, 699-706.
Presser, A.. Interdigitated Microstrip Coupler Design. IEEE transactions on microwave theory and techniques, vol.26, no.10, 801-805.
Bon-Hyun Ku, Sang-Hyun Baek, Songcheol Hong.
A Wideband Transformer-Coupled CMOS Power Amplifier for
RF Microelectronics razavi 1998
Pornpromlikit, S., Jinho Jeong, Presti, C.D., Scuderi, A., Asbeck, P.M.. A Watt-Level Stacked-FET Linear Power Amplifier in Silicon-on-Insulator CMOS. IEEE transactions on microwave theory and techniques, vol.58, no.1, 57-64.
Proc IEEE RFIC Symp Dig High efficiency 5 GHz CMOS power amplifier with adaptive bias control circuit eo 2004 575
Han, Jeonghu, Kim, Younsuk, Park, Changkun, Lee, Dongho, Hong, Songcheol. A CMOS power amplifier with an adaptive bias scheme for mobile radio frequency identification reader applications. Microwave and optical technology letters, vol.49, no.6, 1241-1245.
Proc IEEE TENCON An adaptive bias circuits for high efficiency power amp shin 2009 30
Noh, Y.S., Park, C.S.. An Intelligent Power Amplifier MMIC Using a New Adaptive Bias Control Circuit for W-CDMA Applications. IEEE journal of solid-state circuits, vol.39, no.6, 967-970.
Yang, Kyounghoon, Haddad, G.I., East, J.R.. High-efficiency class-A power amplifiers with a dual-bias-control scheme. IEEE transactions on microwave theory and techniques, vol.47, no.8, 1426-1432.
Deng, Junxiong, Gudem, P.S., Larson, L.E., Kimball, D.F., Asbeck, P.M.. A SiGe PA with dual dynamic bias control and memoryless digital predistortion for WCDMA handset applications. IEEE journal of solid-state circuits, vol.41, no.5, 1210-1221.
Leung, V.W., Deng, Junxiong, Gudem, P.S., Larson, L.E.. Analysis of envelope signal injection for improvement of RF amplifier intermodulation distortion. IEEE journal of solid-state circuits, vol.40, no.9, 1888-1894.
Aitchison, C.S., Mbabele, M., Moazzam, M.R., Budimir, D., Ali, F.. Improvement of third-order intermodulation product of RF and microwave amplifiers by injection. IEEE transactions on microwave theory and techniques, vol.49, no.6, 1148-1154.
Bulja, S., Mirshekar-Syahkal, D.. Combined Low Frequency and Third Harmonic Injection in Power Amplifier Linearization. IEEE microwave and wireless components letters : a publication of the IEEE Microwave Theory and Techniques Society, vol.19, no.9, 584-586.
Park, Hyun-Min, Hong, Songcheol. Bias Dependence of Intermodulation Distortion Asymmetry in Heterojunction Bipolar Transistor Using Nonlinear Large-Signal Model. Japanese journal of applied physics. Part 1, Regular papers, short notes and review papers, vol.42, no.a9, 5438-5444.
Kyu Hwan An, Ockgoo Lee, Hyungwook Kim, Dong Ho Lee, Jeonghu Han, Ki Seok Yang, Younsuk Kim, Jae Joon Chang, Wangmyong Woo, Chang-Ho Lee, Haksun Kim, Laskar, J.. Power-Combining Transformer Techniques for Fully-Integrated CMOS Power Amplifiers. IEEE journal of solid-state circuits, vol.43, no.5, 1064-1075.
IEEE Trans Microw Theory Tech A 1.8-GHz CMOS power amplifier using stacked nMOS and pMOS structures for high-voltage operation son 2009 10.1109/TMTT.2009.2031936 57 2652
RF Power Amplifiers for Wireless Communications cripps 1999
IEEE Trans Microw Theory Tech A quasi-four-pair Class-E CMOS RF power amplifier with an integrated passive device transformer lee 2009 10.1109/TMTT.2009.2015122 57 752
Wang, Chengzhou, Vaidyanathan, M., Larson, L.E.. A capacitance-compensation technique for improved linearity in CMOS class-AB power amplifiers. IEEE journal of solid-state circuits, vol.39, no.11, 1927-1937.
Chowdhury, D., Hull, C.D., Degani, O.B., Wang, Y., Niknejad, A.M.. A Fully Integrated Dual-Mode Highly Linear 2.4 GHz CMOS Power Amplifier for 4G WiMax Applications. IEEE journal of solid-state circuits, vol.44, no.12, 3393-3402.
Park, Changkun, Kim, Younsuk, Kim, Haksun, Hong, Songcheol. A 1.9-GHz CMOS Power Amplifier Using Three-Port Asymmetric Transmission Line Transformer for a Polar Transmitter. IEEE transactions on microwave theory and techniques, vol.55, no.2, 230-238.
Aoki, I., Kee, S., Magoon, R., Aparicio, R., Bohn, F., Zachan, J., Hatcher, G., McClymont, D., Hajimiri, A.. A Fully-Integrated Quad-Band GSM/GPRS CMOS Power Amplifier. IEEE journal of solid-state circuits, vol.43, no.12, 2747-2758.
Vuolevi, J.H.K., Rahkonen, T., Manninen, J.P.A.. Measurement technique for characterizing memory effects in RF power amplifiers. IEEE transactions on microwave theory and techniques, vol.49, no.8, 1383-1389.
Proc IEEE MTT-S Int Microw Symp Dig Two-tone IMD asymmetry in microwave power amplifier carvalho 2000 445
Brinkhoff, J., Parker, A.E.. Effect of baseband impedance on FET intermodulation. IEEE transactions on microwave theory and techniques, vol.51, no.3, 1045-1051.
Borges de Carvalho, N., Pedro, J.C.. A comprehensive explanation of distortion sideband asymmetries. IEEE transactions on microwave theory and techniques, vol.50, no.9, 2090-2101.
Takenaka, I., Ishikura, K., Takahashi, H., Hasegawa, K., Asano, K., Iwata, N.. Improvement of Intermodulation Distortion Asymmetry Characteristics With Wideband Microwave Signals in High Power Amplifiers. IEEE transactions on microwave theory and techniques, vol.56, no.6, 1355-1363.
Jung, Sung-Chan, Park, Hyun-Chul, Kim, Min-Su, Ahn, Gunhyun, Van, Ju-Ho, Hwangbo, Hoon, Park, Cheon-Seok, Park, Sung-Kil, Yang, Youngoo. A New Envelope Predistorter With Envelope Delay Taps for Memory Effect Compensation. IEEE transactions on microwave theory and techniques, vol.55, no.1, 52-59.
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