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NTIS 바로가기Thin solid films, v.520 no.10, 2012년, pp.3808 - 3812
Lee, K. (Materials and Structures Laboratory, Mailbox R3-1, Tokyo Institute of Technology 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan) , Nomura, K. , Yanagi, H. , Kamiya, T. , Hosono, H.
Photovoltaic properties and electronic structures of n-type amorphous In-Gax-Zn-O/p-type Si heterojunction solar cells (x=1, 2, and 3) were investigated focusing on the effects of Ga content based on expectation that Ga-rich films have larger band gaps and improve open circuit voltages (...
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