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NTIS 바로가기Microelectronics reliability, v.52 no.9/10, 2012년, pp.1753 - 1760
McPherson, J.W.
Time-Dependent Dielectric Breakdown (TDDB) models for silica(SiO2)-based dielectrics are revisited so as to better understand the ability of each model to explain quantitatively the generally accepted TDDB observations. Molecular dielectric degradation models, which lead to percolation path generati...
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