최소 단어 이상 선택하여야 합니다.
최대 10 단어까지만 선택 가능합니다.
다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
NTIS 바로가기IOP conference series. Materials science and engineering, v.8, 2010년, pp.012027 -
Vitanov, P (Central Laboratory of Solar Energy and New Energy Sources, Bulgarian Academy of Sciences, Blvd. Tzarigradsko chaussee 72, Sofia, Bulgaria) , Harizanova, A (Central Laboratory of Solar Energy and New Energy Sources, Bulgarian Academy of Sciences, Blvd. Tzarigradsko chaussee 72, Sofia, Bulgaria) , Ivanova, T (Central Laboratory of Solar Energy and New Energy Sources, Bulgarian Academy of Sciences, Blvd. Tzarigradsko chaussee 72, Sofia, Bulgaria) , Dimitrova, T (Four Dimensions, Inc. Hayward, CA. USA)
Based on our previous experience with pseudobinary alloys of (Al2O3)x(ZrO2)1−x as high-k materials and passivating coatings for solar cells, stack systems of ZrO2/Al2O3/ZrO2and Al2O3/ZrO2/Al2O3, deposited by simple and low cost sol-gel technology have been studied. The thin films of ZrO2 and ...
Ogita, Y.I., Ohsone, S., Kudoh, T., Sakamoto, F.. Electrical properties of alumina films grown on Si at low temperature using catalytic CVD. Thin solid films, vol.516, no.5, 836-838.
Ritala, Mikko, Kukli, Kaupo, Rahtu, Antti, Räisänen, Petri I., Leskelä, Markku, Sajavaara, Timo, Keinonen, Juhani. Atomic Layer Deposition of Oxide Thin Films with Metal Alkoxides as Oxygen Sources. Science, vol.288, no.5464, 319-321.
Shi, L., Xia, Y. D., Xu, B., Yin, J., Liu, Z. G.. Thermal stability and electrical properties of titanium-aluminum oxide ultrathin films as high-k gate dielectric materials. Journal of applied physics, vol.101, no.3, 034102-.
Jeon, Sanghun, Yang, Hyundoek, Park, Dae-Gyu, Hwang, Hyunsang. Electrical and Structural Properties of Nanolaminate (Al2O3/ZrO2/Al2O3) for Metal Oxide Semiconductor Gate Dielectric Applications. Japanese journal of applied physics. Part 1, Regular papers, short notes and review papers, vol.41, no.b4, 2390-2393.
Park, Pan Kwi, Kang, Sang-Won. Enhancement of dielectric constant in HfO2 thin films by the addition of Al2O3. Applied physics letters, vol.89, no.19, 192905-.
Desu, Chandra S., Joshi, Pooran C., Desu, Seshu B.. The Enhanced Dielectric and Insulating Properties of Al2O3 Modified Ta2O5 Thin Films. Journal of electroceramics, vol.10, no.3, 209-214.
Zhao, Xinyuan, Vanderbilt, David. Phonons and lattice dielectric properties of zirconia. Physical review. B, Condensed matter and materials physics, vol.65, no.7, 075105-.
Hausmann, Dennis M., Gordon, Roy G.. Surface morphology and crystallinity control in the atomic layer deposition (ALD) of hafnium and zirconium oxide thin films. Journal of crystal growth, vol.249, no.1, 251-261.
Vitanov, Petko, Harizanova, Antoaneta, Petrov, Ivan, Alexieva, Zvetana, Dimitrova, Tatiana. Deposition and Properties of Thin (ZrO2)x(Al2O3)1-x Films on Silicon. Plasma Processes and Polymers, vol.3, no.2, 179-183.
Mohamed, S.H.. Effects of Ag layer and ZnO top layer thicknesses on the physical properties of ZnO/Ag/Zno multilayer system. The Journal of physics and chemistry of solids, vol.69, no.10, 2378-2384.
*원문 PDF 파일 및 링크정보가 존재하지 않을 경우 KISTI DDS 시스템에서 제공하는 원문복사서비스를 사용할 수 있습니다.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.