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NTIS 바로가기Applied physics letters, v.103 no.22, 2013년, pp.222102 -
Cho, Seongjae (Department of Electronic Engineering, Gachon University 1 , Gyeonggi-do 461-701, South Korea) , Man Kang, In (School of Electronics Engineering, Kyungpook National University 2 , Daegu 702-701, South Korea) , Rok Kim, Kyung (School of Electrical and Computer Engineering, Ulsan National Institute of Science and Technology 3 , Ulsan 689-798, South Korea) , Park, Byung-Gook (Inter-university Semiconductor Research Center (ISRC) and Department of Electrical and Computer Engineering 4 , , Seoul 151-742, South Korea) , Harris Jr., James S. (Department of Electrical Engineering, Stanford University 5 , Stanford, California 94305, USA)
In this work, Ge-based high-hole-mobility transistor with Si compatibility is designed, and its performance is evaluated. A 2-dimensional hole gas is effectively constructed by a AlGaAs/Ge/Si heterojunction with a sufficiently large valence band offset. Moreover, an intrinsic Ge channel is exploited...
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