다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
NTIS 바로가기
Semiconductor science and technology, v.30 no.1, 2015년, pp.015016 -
Lin, Yu-Shyan , Lin, Shin-Fu , Hsu, Wei-Chou
AI-Helper
This work presents AlGaN/GaN high-electron mobility transistors (HEMTs) that are grown on silicon. Various passivation layers are deposited on AlGaN/GaN HEMTs. AlGaN/GaN HEMTs were fabricated with TiO2 dielectrics, and their performance was compared with that of unpassivated and that of HfO2-passiva...
[1] Wang T B, Hsu W C, Su J L, Hsu R T, Wu Y H, Lin Y S and Su K H 2007 J. Electrochem. Soc. 154 H131 10.1149/1.2409478 Wang T B, Hsu W C, Su J L, Hsu R T, Wu Y H, Lin Y S and Su K H J. Electrochem. Soc. 0013-4651 154 2007 H131
[2] Green B, Chu K, Chumbes E, Smart J, Shealy J and Eastman L 2000 IEEE Electron Device Lett. 21 268 10.1109/55.843146 Green B, Chu K, Chumbes E, Smart J, Shealy J and Eastman L IEEE Electron Device Lett. 0741-3106 21 2000 268
[3] Vetury R, Zhang R, Keller N Q and Mishra U K 2001 IEEE Trans. Electron Devices 48 560 10.1109/16.906451 Vetury R, Zhang R, Keller N Q and Mishra U K IEEE Trans. Electron Devices 0018-9383 48 2001 560
[4] Luo B et al 2002 Appl. Phys. Lett. 80 1661 10.1063/1.1455692 Luo B et al Appl. Phys. Lett. 80 2002 1661
[5] Mittereder J A, Binari S C, Klein P B, Roussos J A, Katzer D S, Storm D F, Koleske D D, Wickenden A E and Henry R L 2003 Appl. Phys. Lett. 83 1650 10.1063/1.1604472 Mittereder J A, Binari S C, Klein P B, Roussos J A, Katzer D S, Storm D F, Koleske D D, Wickenden A E and Henry R L Appl. Phys. Lett. 83 2003 1650
[6] Bernat J, Javorka P, Fox A, Marso M, Luth H and Kordos P 2003 Solid-State Electron. 47 2097 10.1016/S0038-1101(03)00238-7 Bernat J, Javorka P, Fox A, Marso M, Luth H and Kordos P Solid-State Electron. 0038-1101 47 2003 2097
[7] Onojima N, Higashiwaki M, Suda J, Kimoto T, Mimura T and Matsui T 2007 J. Appl. Phys. 101 043703 10.1063/1.2472255 Onojima N, Higashiwaki M, Suda J, Kimoto T, Mimura T and Matsui T J. Appl. Phys. 101 043703 2007
[8] Jeon C M and Lee J L 2005 Appl. Phys. Lett. 86 172101 10.1063/1.1906328 Jeon C M and Lee J L Appl. Phys. Lett. 86 172101 2005
[9] Liu C, Chor E F and Tan L S 2007 Semicond. Sci. Technol. 22 522 10.1088/0268-1242/22/5/011 Liu C, Chor E F and Tan L S Semicond. Sci. Technol. 0268-1242 22 5 011 2007 522
[10] Miyazaki E, Goda Y, Kishimoto S and Mizutani T 2011 Solid-State Electron. 62 152 10.1016/j.sse.2011.04.017 Miyazaki E, Goda Y, Kishimoto S and Mizutani T Solid-State Electron. 0038-1101 62 2011 152
[11] Yagi S, Shimizu M, Inada M, Yamamoto Y, Piao G, Okumura H, Yano Y, Akutsu N and Ohashi H 2006 Solid-State Electron. 50 1057 10.1016/j.sse.2006.04.041 Yagi S, Shimizu M, Inada M, Yamamoto Y, Piao G, Okumura H, Yano Y, Akutsu N and Ohashi H Solid-State Electron. 0038-1101 50 2006 1057
[12] Hansen P J, Vaithyanathan V, Wu Y, Mates T, Heikman S, Mishra U K, York R A, Schlom D G and Speck J S 2005 J. Vac. Sci. Technol. B 23 499 10.1116/1.1868672 Hansen P J, Vaithyanathan V, Wu Y, Mates T, Heikman S, Mishra U K, York R A, Schlom D G and Speck J S J. Vac. Sci. Technol. 0734-211X 23 B 2005 499
[13] Pei Y, Rajan S, Higashiwaki M, Chen Z, DenBaars S P and Mishra U K 2009 IEEE Electon. Dev. Lett. 30 313 10.1109/LED.2009.2012444 Pei Y, Rajan S, Higashiwaki M, Chen Z, DenBaars S P and Mishra U K IEEE Electon. Dev. Lett. 30 2009 313
[14] Guerra D, Saraniti M, Ferry D K, Goodnick S M and Marino F A 2011 IEEE Trans. Electron Devices 58 3876 10.1109/TED.2011.2164407 Guerra D, Saraniti M, Ferry D K, Goodnick S M and Marino F A IEEE Trans. Electron Devices 0018-9383 58 2011 3876
[15] Lin Y S, Jou Y J and Huang P C 2009 Appl. Phys. Lett. 94 063506 10.1063/1.3075842 Lin Y S, Jou Y J and Huang P C Appl. Phys. Lett. 94 063506 2009
[16] Lin Y S, Liang S K and Lin Y S 2009 J. Electrochem. Soc. 156 H401 10.1149/1.3098977 Lin Y S, Liang S K and Lin Y S J. Electrochem. Soc. 0013-4651 156 2009 H401
[17] Lin Y S, Lin Y T and Huang Y W 2011 Thin Solid Films 519 3388 10.1016/j.tsf.2010.12.238 Lin Y S, Lin Y T and Huang Y W Thin Solid Films 0040-6090 519 2011 3388
[18] Gillespie J K et al 2002 IEEE Elec. Dev. Lett. 23 505 10.1109/LED.2002.802592 Gillespie J K et al IEEE Elec. Dev. Lett. 0741-3106 23 2002 505
[19] Kim H, Thompson R M, Tilak V, Prunty T R, Shealy J R and Eastman L F 2003 IEEE Elec. Dev. Lett. 24 421 10.1109/LED.2003.813375 Kim H, Thompson R M, Tilak V, Prunty T R, Shealy J R and Eastman L F IEEE Elec. Dev. Lett. 0741-3106 24 2003 421
[20] Liu H Y, Chou B Y, Hsu W C, Lee C S and Ho C S 2011 IEEE Trans. Electron Devices 58 4430 10.1109/ted.2011.2167512 Liu H Y, Chou B Y, Hsu W C, Lee C S and Ho C S IEEE Trans. Electron Devices 0018-9383 58 4430 2011
[21] Li G H, Yang L, Jin Y X and Zhang L D 2000 Thin Solid Films 368 163 10.1016/S0040-6090(00)00725-2 Li G H, Yang L, Jin Y X and Zhang L D Thin Solid Films 0040-6090 368 2000 163
[22] Bennett N S, Cherkaoui K, Wong C S, O’Connor É, Monaghan S, Hurley P, Chauhan L and McNally P J 2014 Thin Solid Films 569 104 10.1016/j.tsf.2014.08.025 Bennett N S, Cherkaoui K, Wong C S, O’Connor É, Monaghan S, Hurley P, Chauhan L and McNally P J Thin Solid Films 0040-6090 569 2014 104
[23] Ibbetson J P, Fini P T, Ness K D, DenBaars S P, Speck J S and Mishra U K 2000 Appl. Phys. Lett. 77 250 10.1063/1.126940 Ibbetson J P, Fini P T, Ness K D, DenBaars S P, Speck J S and Mishra U K Appl. Phys. Lett. 77 2000 250
[24] Wilk G D, Wallace R M and Anthony J M 2001 J. Appl. Phys. 89 5243 10.1063/1.1361065 Wilk G D, Wallace R M and Anthony J M J. Appl. Phys. 89 2001 5243
해당 논문의 주제분야에서 활용도가 높은 상위 5개 콘텐츠를 보여줍니다.
더보기 버튼을 클릭하시면 더 많은 관련자료를 살펴볼 수 있습니다.
*원문 PDF 파일 및 링크정보가 존재하지 않을 경우 KISTI DDS 시스템에서 제공하는 원문복사서비스를 사용할 수 있습니다.
Copyright KISTI. All Rights Reserved.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.