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Semiconductor science and technology, v.30 no.1, 2015년, pp.015016 -
Lin, Yu-Shyan , Lin, Shin-Fu , Hsu, Wei-Chou
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This work presents AlGaN/GaN high-electron mobility transistors (HEMTs) that are grown on silicon. Various passivation layers are deposited on AlGaN/GaN HEMTs. AlGaN/GaN HEMTs were fabricated with TiO2 dielectrics, and their performance was compared with that of unpassivated and that of HfO2-passiva...
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