다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
NTIS 바로가기
Thin solid films, v.583, 2015년, pp.40 - 45
Joo, Young-Hee (Corresponding author.) , Kim, Chang-Il
AI-Helper
Abstract We investigated the etching process of indium–gallium–zinc oxide (IGZO) thin films in an inductively coupled plasma system. The dry etching characteristics of the IGZO thin films were studied by varying the CF4/Ar gas mixing ratio, RF power, DC-bias voltage, and process pressur...
Appl. Phys. Lett. Owen 90 033512 2007 10.1063/1.2432951 Organic photovoltaic devices with Ga-doped ZnO electrode
Appl. Phys. Lett. Kim 90 212114 2007 10.1063/1.2742790 High mobility bottom gate InGaZnO thin film transistors with SiOx etch stopper
Appl. Phys. Lett. Sato 94 133502 2009 10.1063/1.3112566 Amorphous In-Ga-Zn-O coplanar homojunction thin-film transistor
J. Electrochem. Soc. Barquinha 156 H161 2009 10.1149/1.3049819 Toward high-performance amorphous GIZO TFTs
Thin Solid Films Lee 518 3992 2010 10.1016/j.tsf.2009.12.010 Wet etching rates of InGaZnO for the fabrication of transparent thin-film transistors on plastic substrates
J. Korean Phys. Soc. Cho 54 531 2009 10.3938/jkps.54.531 Passivation of bottom-gate IGZO thin film transistors
Appl. Phys. Lett. Na 93 063501 2008 10.1063/1.2969780 High field-effect mobility amorphous InGaZnO transistors with aluminum electrodes
Microelectron. Eng. Joo 112 74 2013 10.1016/j.mee.2013.06.005 Surface reaction effects on dry etching of IGZO thin films in N2/BCl3/Ar plasma
J. Electrochem. Soc. Joo 159 D190 2012 10.1149/2.034204jes A study of the surface chemical reactions on IGZO thin film in BCl3/Ar inductively coupled plasma
J. Korean Phys. Soc. Kim 42 S824 2003 Etching properties of BLT films in CF4/Ar plasma
Microelectron. Eng. Na 83 328 2006 10.1016/j.mee.2005.09.007 Etching characteristics of ZnO thin films in chlorine-containing inductively coupled plasmas
J. Vac. Sci. Technol. Shul A15 633 1997 10.1116/1.580696 High-density plasma etching of compound semiconductors
J. Phys. D. Appl. Phys. Bang 42 235102 2009 10.1088/0022-3727/42/23/235102 Investigation of the effects of interface carrier concentration on ZnO thin film transistors fabricated by atomic layer deposition
J. Appl. Phys. Cebulla 83 1087 1998 10.1063/1.366798 Al-doped zinc oxide films deposited by simultaneous rf and dc excitation of a magnetron plasma: relationships between plasma parameters and structural and electrical film properties
J. Cryst. Growth Chen 220 254 2000 10.1016/S0022-0248(00)00834-4 Surface characterization of transparent conductive oxide Al-doped ZnO films
Appl. Phys. Lett. Nomura 92 202117 2008 10.1063/1.2927306 Subgap states in transparent amorphous oxide semiconductor, In-Ga-Zn-O, observed by bulk sensitive x-ray photoelectron spectroscopy
Phys. Status Solidi A Lee 207 1845 2010 10.1002/pssa.200925514 The effect of oxygen remote plasma treatment on ZnO TFTs fabricated by atomic layer deposition
*원문 PDF 파일 및 링크정보가 존재하지 않을 경우 KISTI DDS 시스템에서 제공하는 원문복사서비스를 사용할 수 있습니다.
Copyright KISTI. All Rights Reserved.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.