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Thin solid films, v.584, 2015년, pp.135 - 140
Cheng, S.-Y. (Corresponding author.) , Chen, K.-T. , Chang, S.T.
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Abstract Advanced MOSFET devices formed from Si-based materials, such as silicon-germanium alloys, are simple and low cost to manufacture. This work focuses on hole mobility in the inversion layer of PMOSFETs using alloy channel materials. The primary topic of this work is the theoretical calculati...
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