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NTIS 바로가기Carbon, v.99, 2016년, pp.174 - 185
Zhu, H. , Li, X. , Han, F. , Dong, Z. , Yuan, G. , Ma, G. , Westwood, A. , He, K.
The formation and growth of silicon carbide whiskers (SiCw) have been investigated by reaction of silicon sources at 1400 oC with pitch-based carbon fibers possessing various microstructures. Isotropic and anisotropic pitch-based carbon fibers treated at various temperatures were employed as carbon ...
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