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NTIS 바로가기IEEE transactions on microwave theory and techniques, v.63 no.12 pt.2, 2015년, pp.4406 - 4414
Sangho Lee (Sch. of Electr. Eng. & Comput. Eng., Seoul Nat. Univ., Seoul, South Korea) , Hongjong Park (Sch. of Electr. Eng. & Comput. Eng., Seoul Nat. Univ., Seoul, South Korea) , Kwangseok Choi (Sch. of Electr. Eng. & Comput. Eng., Seoul Nat. Univ., Seoul, South Korea) , Youngwoo Kwon (Sch. of Electr. Eng. & Comput. Eng., Seoul Nat. Univ., Seoul, South Korea)
Non-Foster matching is applied to design a multi- octave broadband GaN power amplifier (PA) in this paper. The bandwidth limitation from high-Q interstage matching is overcome through the use of negative capacitor, which is realized with a negative impedance converter (NIC) using the cross-coupled G...
Jardel, O., De Groote, F., Reveyrand, T., Jacquet, J.-C., Charbonniaud, C., Teyssier, J.-P., Floriot, D., Quere, R.. An Electrothermal Model for AlGaN/GaN Power HEMTs Including Trapping Effects to Improve Large-Signal Simulation Results on High VSWR. IEEE transactions on microwave theory and techniques, vol.55, no.12, 2660-2669.
Sussman-Fort, S.E., Rudish, R.M.. Non-Foster Impedance Matching of Electrically-Small Antennas. IEEE transactions on antennas and propagation, vol.57, no.8, 2230-2241.
Raffo, Antonio, Vadala, Valeria, Schreurs, Dominique M M.-P, Crupi, Giovanni, Avolio, Gustavo, Caddemi, Alina, Vannini, Giorgio. Nonlinear Dispersive Modeling of Electron Devices Oriented to GaN Power Amplifier Design. IEEE transactions on microwave theory and techniques, vol.58, no.4, 710-718.
Haedong Jang, Roblin, Patrick, Zhijian Xie. Model-Based Nonlinear Embedding for Power-Amplifier Design. IEEE transactions on microwave theory and techniques, vol.62, no.9, 1986-2002.
Nuttinck, S., Gebara, E., Laskar, J., Harris, H.M.. Study of self-heating effects, temperature-dependent modeling, and pulsed load-pull measurements on GaN HEMTs. IEEE transactions on microwave theory and techniques, vol.49, no.12, 2413-2420.
Ardaravičius, L., Matulionis, A., Liberis, J., Kiprijanovic, O., Ramonas, M., Eastman, L. F., Shealy, J. R., Vertiatchikh, A.. Electron drift velocity in AlGaN/GaN channel at high electric fields. Applied physics letters, vol.83, no.19, 4038-4040.
Campbell, C., Lee, C., Williams, V., Ming-Yih Kao, Hua-Quen Tserng, Saunier, P., Balisteri, T.. A Wideband Power Amplifier MMIC Utilizing GaN on SiC HEMT Technology. IEEE journal of solid-state circuits, vol.44, no.10, 2640-2647.
Sunghwan Park, Jung-Lin Woo, Unha Kim, Youngwoo Kwon. Broadband CMOS Stacked RF Power Amplifier Using Reconfigurable Interstage Network for Wideband Envelope Tracking. IEEE transactions on microwave theory and techniques, vol.63, no.4, 1174-1185.
IEEE RF Integrated Circuits Symp Dig A ${-}189$ dBc/Hz FOMT wide tuning range Ka-band VCO using tunable negative capacitance and inductance redistribution wu 2013 199
Linvill, J.G.. Transistor Negative-Impedance Converters. Proceedings of the IRE, vol.41, no.6, 725-729.
Ghadiri, A, Moez, K. Gain-Enhanced Distributed Amplifier Using Negative Capacitance. IEEE transactions on circuits and systems. a publication of the IEEE Circuits and Systems Society. I, Regular papers, vol.57, no.11, 2834-2843.
Tade, Oluwabunmi O., Gardner, Peter, Hall, Peter S.. Antenna bandwidth broadening with a negative impedance converter. International Journal of Microwave and Wireless Technologies, vol.5, no.3, 249-260.
Fano, R.M.. Theoretical limitations on the broadband matching of arbitrary impedances. Journal of the Franklin Institute, vol.249, no.2, 139-154.
Fano, R.M.. Theoretical limitations on the broadband matching of arbitrary impedances. Journal of the Franklin Institute, vol.249, no.1, 57-83.
IEEE MTT-S Int Microw Symp Dig A 6?18 GHz GaN pHEMT power amplifier using non-foster matching lee 2015
Santhakumar, R., Thibeault, B., Higashiwaki, M., Keller, S., Zhen Chen, Mishra, U. K., York, R. A.. Two-Stage High-Gain High-Power Distributed Amplifier Using Dual-Gate GaN HEMTs. IEEE transactions on microwave theory and techniques, vol.59, no.8, 2059-2063.
Schmid, Ulf, Sledzik, Hardy, Schuh, Patrick, Schroth, Jorg, Oppermann, Martin, Bruckner, Peter, van Raay, Friedbert, Quay, Rudiger, Seelmann-Eggebert, Matthias. Ultra-Wideband GaN MMIC Chip Set and High Power Amplifier Module for Multi-Function Defense AESA Applications. IEEE transactions on microwave theory and techniques, vol.61, no.8, 3043-3051.
Proc Asia-Pacific Microwave Conf C-Ku band ultra broadband GaN MMIC amplifier with 20 W output power kuwata 2011 1558
IEEE MTT-S Int Microw Symp Dig Three stage 6?18 GHz high gain and high power amplifier based on GaN technology mouginot 2010 1392
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