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Journal of the Korean Physical Society, v.68 no.3, 2016년, pp.448 - 451
Yalishev, Vadim Sh. , Yuldashev, Shavkat U. , Yunusov, Ziyodbek A. , Kang, Tae Won
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The response of the near-band-edge photoluminescence (PL) emission of ZnO thin films to annealing and the electric field's action was investigated. These processes separately caused similar changes in the PL spectrum. The donor bound exciton emission at 3.36 eV, which is attributed to bulk defects, ...
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