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Scientific reports, v.6, 2016년, pp.34545 -
Bao, Wei (Department of Physics, Shenzhen Institute of Research and Innovation (SIRI), and HKU-CAS Joint Laboratory on New Materials, The University of Hong Kong , Pokfulam Road, Hong Kong, China) , Su, Zhicheng (Department of Physics, Shenzhen Institute of Research and Innovation (SIRI), and HKU-CAS Joint Laboratory on New Materials, The University of Hong Kong , Pokfulam Road, Hong Kong, China) , Zheng, Changcheng (Mathematics and Physics Centre, Department of Mathematical Sciences, Xi’an Jiaotong-Liverpool University , Suzhou 215123, China) , Ning, Jiqiang (Department of Physics, Shenzhen Institute of Research and Innovation (SIRI), and HKU-CAS Joint Laboratory on New Materials, The University of Hong Kong , Pokfulam Road, Hong Kong, China) , Xu, Shijie (Department of Physics, Shenzhen Institute of Research and Innovation (SIRI), and HKU-CAS Joint Laboratory on New Materials, The University of Hong Kong , Pokfulam Road, Hong Kong, China Chin)
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Two-dimensional InGaN/GaN multiple-quantum-wells (MQW) LED structure was nanotextured into quasi-one-dimensional nanowires (NWs) with different average diameters with a combination approach of Ni nanoislands as mask + dry etching. Such nanotexturing bring out several appealing effects including deep...
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