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NTIS 바로가기Electronics letters, v.52 no.18, 2016년, pp.1554 - 1555
Song, BoBae (Dankook University, Republic of Korea) , Koo, YongSeo
An electrostatic discharge (ESD) protection circuit with novel structure based on a silicon-controlled rectifier (SCR) is proposed for 5 V ESD protection of integrated circuits. The proposed ESD protection circuit has large current driving capacity due to its low on-resistance and high ESD robustnes...
Ker, Ming-Dou, Yen, Cheng-Cheng. Investigation and Design of On-Chip Power-Rail ESD Clamp Circuits Without Suffering Latchup-Like Failure During System-Level ESD Test. IEEE journal of solid-state circuits, vol.43, no.11, 2533-2545.
Vashchenko, V.A., Concannon, A., ter Beek, M., Hopper, P.. High holding voltage cascoded LVTSCR structures for 5.5-V tolerant ESD protection clamps. IEEE transactions on device and materials reliability : a publication of the IEEE Electron Devices Society and the IEEE Reliability Society, vol.4, no.2, 273-280.
Ker, Ming-Dou, Hsu, K.-C.. Overview of on-chip electrostatic discharge protection design with SCR-based devices in CMOS integrated circuits. IEEE transactions on device and materials reliability : a publication of the IEEE Electron Devices Society and the IEEE Reliability Society, vol.5, no.2, 235-249.
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