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NTIS 바로가기Journal of alloys and compounds, v.729, 2017년, pp.1195 - 1200
Yang, Dae-Gyu (Department of Materials Science and Engineering, Chungnam National University) , Kim, Hyoung-Do (Department of Materials Science and Engineering, Chungnam National University) , Kim, Jong Heon (Department of Materials Science and Engineering, Chungnam National University) , Park, Kyung (School of Integrated Technology, Yonsei University) , Kim, Jung Hyun (Department of Advanced Materials Science and Engineering, Hanbat National University) , Kim, Yong Joo (Biosystems Machinery Engineering, Chungnam National University) , Park, Jozeph (Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology) , Kim, Hyun-Suk (Department of Materials Science and Engineering, Chungnam National University)
Abstract This study consists of an investigation on the electrical characteristics of amorphous In-Ga-Zn-O (a-IGZO) thin-film-transistors (TFTs) using SiO2 and Al2O3 gate insulators deposited at temperatures lower than 200 °C. The SiO2 and Al2O3 layers were synthesized by radio-frequency magnet...
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