[논문]Performance and stability of amorphous In-Ga-Zn-O thin film transistors involving gate insulators synthesized at low temperatures

Yang, Dae-Gyu; Kim, Hyoung-Do; Kim, Jong Heon; Park, Kyung; Kim, Jung Hyun; Kim, Yong Joo; Park, Jozeph; Kim, Hyun-Suk

doi:10.1016/j.jallcom.2017.09.270

Performance and stability of amorphous In-Ga-Zn-O thin film transistors involving gate insulators synthesized at low temperatures

Journal of alloys and compounds, v.729, 2017년, pp.1195 - 1200

Yang, Dae-Gyu (Department of Materials Science and Engineering, Chungnam National University) , Kim, Hyoung-Do (Department of Materials Science and Engineering, Chungnam National University) , Kim, Jong Heon (Department of Materials Science and Engineering, Chungnam National University) , Park, Kyung (School of Integrated Technology, Yonsei University) , Kim, Jung Hyun (Department of Advanced Materials Science and Engineering, Hanbat National University) , Kim, Yong Joo (Biosystems Machinery Engineering, Chungnam National University) , Park, Jozeph (Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology) , Kim, Hyun-Suk (Department of Materials Science and Engineering, Chungnam National University)

Abstract ▼ AI-Helper

Abstract This study consists of an investigation on the electrical characteristics of amorphous In-Ga-Zn-O (a-IGZO) thin-film-transistors (TFTs) using SiO2 and Al2O3 gate insulators deposited at temperatures lower than 200 °C. The SiO2 and Al2O3 layers were synthesized by radio-frequency magnetron sputtering and atomic layer deposition (ALD). The a-IGZO TFTs involving stacked Al2O3/SiO2 gate insulators exhibit relatively high performance compared to those based on single SiO2 dielectrics. The maximum field effect mobility and subthreshold swing (SS) values obtained were 6.96 cm2/Vs and 0.28 V/decade, respectively. The threshold voltage shift (ΔVth) under negative bias stress (NBS), negative bias illumination stress (NBIS) and positive bias stress (PBS) were −0.38V, −2.05 V and 1.98 V, respectively. Here it is suspected that the defect content in sputtered SiO2 is reduced when it is grown onto ALD Al2O3, thus enhancing the device performance and stability. Highlights The fabrication of IGZO TFTs was demonstrated at low temperature processes. IGZO thin-film transistors exhibit excellent electron transport properties with high stability. The fabrication process at low temperature is promising for flexible oxide TFT applications. Graphical abstract [DISPLAY OMISSION]

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Performance and stability of amorphous In-Ga-Zn-O thin film transistors involving gate insulators synthesized at low temperatures

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Performance and stability of amorphous In-Ga-Zn-O thin film transistors involving gate insulators synthesized at low temperatures

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