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NTIS 바로가기IEEE transactions on electron devices, v.64 no.12, 2017년, pp.4974 - 4979
Jo, Jaesung (Department of Electrical and Computer Engineering, University of Seoul, Seoul, South Korea) , Kim, Min Gee (Department of Electrical and Computer Engineering, University of Seoul, Seoul, South Korea) , Lee, Hyunjae (Department of Electrical and Computer Engineering, University of Seoul, Seoul, South Korea) , Choi, Hyunwoo (Department of Electrical and Computer Engineering, University of Seoul, Seoul, South Korea) , Shin, Changhwan
With lots of interest in negative capacitance field-effect transistors for ultralow-power complementary metal–oxide–semiconductor technology, negative capacitance thin-film transistors (NCTFTs) have also received much attention. Although previous studies on NCTFTs were done, the NC eff...
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Nam, Sungho, Seo, Jooyeok, Kim, Hwajeong, Kim, Youngkyoo. 5 V driving organic non-volatile memory transistors with poly(vinyl alcohol) gate insulator and poly(3-hexylthiophene) channel layers. Applied physics letters, vol.107, no.15, 153302-.
Shin, Changhwan, Lee, Gwang-Geun, Han, Dae-Hee, Han, Seung-Pil, Tokumitsu, Eisuke, Ohmi, Shun-Ichiro, Kim, Dong-Joo, Ishiwara, Hiroshi, Park, Minseo, Kim, Seung-Hyun, Lee, Wan-Gyu, Hwang, Yun Jeong, Park, Byung-Eun. Experimental demonstration of a ferroelectric FET using paper substrate. IEICE Electronics Express, vol.11, no.14, 20140447-20140447.
Furukawa, T., Takahashi, Y., Nakajima, T.. Recent advances in ferroelectric polymer thin films for memory applications. Current applied physics : the official journal of the Korean Physical Society, vol.10, no.1, e62-e67.
Quantum transport and phase-field modeling for next-generation logic devices smith 2017
Ko, Eunah, Lee, Jae Woo, Shin, Changhwan. Negative Capacitance FinFET With Sub-20-mV/decade Subthreshold Slope and Minimal Hysteresis of 0.48 V. IEEE electron device letters : a publication of the IEEE Electron Devices Society, vol.38, no.4, 418-421.
Ku, Hansol, Shin, Changhwan. Transient Response of Negative Capacitance in P(VDF0.75-TrFE0.25) Organic Ferroelectric Capacitor. IEEE journal of the Electron Devices Society, vol.5, no.3, 232-236.
Seo, Junbeom, Lee, Jaehyun, Shin, Mincheol. Analysis of Drain-Induced Barrier Rising in Short-Channel Negative-Capacitance FETs and Its Applications. IEEE transactions on electron devices, vol.64, no.4, 1793-1798.
McGuire, Felicia A., Cheng, Zhihui, Price, Katherine, Franklin, Aaron D.. Sub-60 mV/decade switching in 2D negative capacitance field-effect transistors with integrated ferroelectric polymer. Applied physics letters, vol.109, no.9, 093101-.
McGuire, Felicia A., Lin, Yuh-Chen, Price, Katherine, Rayner, G. Bruce, Khandelwal, Sourabh, Salahuddin, Sayeef, Franklin, Aaron D.. Sustained Sub-60 mV/decade Switching via the Negative Capacitance Effect in MoS2 Transistors. Nano letters : a journal dedicated to nanoscience and nanotechnology, vol.17, no.8, 4801-4806.
Khan, Asif Islam, Radhakrishna, Ujwal, Chatterjee, Korok, Salahuddin, Sayeef, Antoniadis, Dimitri A.. Negative Capacitance Behavior in a Leaky Ferroelectric. IEEE transactions on electron devices, vol.63, no.11, 4416-4422.
Zhu, Zhengyong, Zhu, Huilong, Wang, Sumei, Liu, Yongbo, Yin, Xiaogen, Jia, Kunpeng, Zhao, Chao. Negative-Capacitance Characteristics in a Steady-State Ferroelectric Capacitor Made of Parallel Domains. IEEE electron device letters : a publication of the IEEE Electron Devices Society, vol.38, no.8, 1176-1179.
Cano, A., Jiménez, D.. Multidomain ferroelectricity as a limiting factor for voltage amplification in ferroelectric field-effect transistors. Applied physics letters, vol.97, no.13, 133509-.
Jaesung Jo, Changhwan Shin. Negative Capacitance Field Effect Transistor With Hysteresis-Free Sub-60-mV/Decade Switching. IEEE electron device letters : a publication of the IEEE Electron Devices Society, vol.37, no.3, 245-248.
Chang, J.-F., Sun, B., Breiby, D. W., Nielsen, M. M., Solling, T. I., Giles, M., McCulloch, I., Sirringhaus, H.. Enhanced Mobility of Poly(3-hexylthiophene) Transistors by Spin-Coating from High-Boiling-Point Solvents. Chemistry of materials : a publication of the American Chemical Society, vol.16, no.23, 4772-4776.
IEDM Tech Dig Metal-ferroelectric-meta-oxide-semiconductor field effect transistor with sub-60mV/decade subthreshold swing and internal voltage amplification rusu 2010 16.3.1
Bao, Zhenan, Dodabalapur, Ananth, Lovinger, Andrew J.. Soluble and processable regioregular poly(3-hexylthiophene) for thin film field-effect transistor applications with high mobility. Applied physics letters, vol.69, no.26, 4108-4110.
Khan, Asif Islam, Chatterjee, Korok, Wang, Brian, Drapcho, Steven, You, Long, Serrao, Claudy, Bakaul, Saidur Rahman, Ramesh, Ramamoorthy, Salahuddin, Sayeef. Negative capacitance in a ferroelectric capacitor. Nature materials, vol.14, no.2, 182-186.
IEDM Tech Dig Ferroelectric HfZrOx Ge and GeSn PMOSFETs with Sub-60 mV/decade subthreshold swing, negligible hysteresis, and improved $I_{\rm {DS}}$ zhou 2016 12.2.1
Hu, Wei Jin, Juo, Deng-Ming, You, Lu, Wang, Junling, Chen, Yi-Chun, Chu, Ying-Hao, Wu, Tom. Universal Ferroelectric Switching Dynamics of Vinylidene Fluoride-trifluoroethylene Copolymer Films. Scientific reports, vol.4, 4772-.
Pahwa, Girish, Dutta, Tapas, Agarwal, Amit, Chauhan, Yogesh Singh. Compact Model for Ferroelectric Negative Capacitance Transistor With MFIS Structure. IEEE transactions on electron devices, vol.64, no.3, 1366-1374.
Jaesung Jo, Changhwan Shin. Impact of temperature on negative capacitance field-effect transistor. Electronics letters, vol.51, no.1, 106-108.
Jo, Jaesung, Choi, Woo Young, Park, Jung-Dong, Shim, Jae Won, Yu, Hyun-Yong, Shin, Changhwan. Negative Capacitance in Organic/Ferroelectric Capacitor to Implement Steep Switching MOS Devices. Nano letters : a journal dedicated to nanoscience and nanotechnology, vol.15, no.7, 4553-4556.
Hyunjae Lee, Youngki Yoon, Changhwan Shin. Current-Voltage Model for Negative Capacitance Field-Effect Transistors. IEEE electron device letters : a publication of the IEEE Electron Devices Society, vol.38, no.5, 669-672.
Salahuddin, S., Datta, S.. Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices. Nano letters : a journal dedicated to nanoscience and nanotechnology, vol.8, no.2, 405-410.
Islam Khan, Asif, Bhowmik, Debanjan, Yu, Pu, Joo Kim, Sung, Pan, Xiaoqing, Ramesh, Ramamoorthy, Salahuddin, Sayeef. Experimental evidence of ferroelectric negative capacitance in nanoscale heterostructures. Applied physics letters, vol.99, no.11, 113501-.
Khan, Asif Islam, Chatterjee, Korok, Duarte, Juan Pablo, Zhongyuan Lu, Sachid, Angada, Khandelwal, Sourabh, Ramesh, Ramamoorthy, Chenming Hu, Salahuddin, Sayeef. Negative Capacitance in Short-Channel FinFETs Externally Connected to an Epitaxial Ferroelectric Capacitor. IEEE electron device letters : a publication of the IEEE Electron Devices Society, vol.37, no.1, 111-114.
Appleby, Daniel J. R., Ponon, Nikhil K., Kwa, Kelvin S. K., Zou, Bin, Petrov, Peter K., Wang, Tianle, Alford, Neil M., O’Neill, Anthony. Experimental Observation of Negative Capacitance in Ferroelectrics at Room Temperature. Nano letters : a journal dedicated to nanoscience and nanotechnology, vol.14, no.7, 3864-3868.
Guo, Xiaojun, Xu, Yong, Ogier, Simon, Ng, Tse Nga, Caironi, Mario, Perinot, Andrea, Li, Ling, Zhao, Jiaqing, Tang, Wei, Sporea, Radu A., Nejim, Ahmed, Carrabina, Jordi, Cain, Paul, Yan, Feng. Current Status and Opportunities of Organic Thin-Film Transistor Technologies. IEEE transactions on electron devices, vol.64, no.5, 1906-1921.
Appl Phys Lett Solution-processed organic ferroelectric field-effect transistors on ultra-flexible substrates kim 2016 10.1063/1.4964459 109 163502
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