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Semiconductor science and technology, v.33 no.1, 2018년, pp.015012 -
Yue, Lan (School of Materials Science and Engineering, Special and Key Laboratory of Guizhou Provincial Higher Education for Photoelectric information Analysis and Processing, Guizhou Minzu University, Guiyang 550025, People’s Republic of China) , Meng, Fanxin (China ZhenHua Group YongGuang Electronics Co., Ltd, Guiyang 550018, People’s Republic of China) , Chen, Jiarong (School of Materials Science and Engineering, Special and Key Laboratory of Guizhou Provincial Higher Education for Photoelectric information Analysis and Processing, Guizhou Minzu University, Guiyang 550025, People’s Republic of China)
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The thin-film transistors (TFTs) with amorphous aluminum-indium-zinc-oxide (a-AIZO) active layer were prepared by dip coating method. The dependence of properties of TFTs on the active-layer composition and structure was investigated. The results indicate that Al atoms acted as a carrier suppressor ...
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