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Journal of crystal growth, v.487, 2018년, pp.8 - 11
Zhang, Mingzhi (School of Optical and Electronic Information, Huazhong University of Science and Technology) , Zheng, Zhiping (School of Optical and Electronic Information, Huazhong University of Science and Technology) , Chen, Zheng (School of Optical and Electronic Information, Huazhong University of Science and Technology) , Zhang, Sen (School of Optical and Electronic Information, Huazhong University of Science and Technology) , Luo, Wei (School of Optical and Electronic Information, Huazhong University of Science and Technology) , Fu, Qiuyun (School of Optical and Electronic Information, Huazhong University of Science and Technology)
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Abstract Thallium bromide (TlBr) is an attractive semiconductor material for fabrication of radiation detectors due to its high photon stopping power originating from its high atomic number, wide band gap and high resistivity. In this paper the vertical Bridgman method was used for crystal growth a...
Nucl. Instrum. Methods Phys. Res. A Mcgregor 395 1 101 1997 10.1016/S0168-9002(97)00620-7 Room-temperature compound semiconductor radiation detectors
Kozlova 1979 Studies of the Means to Manage Photosensitivity of AgCl Crystals
Nucl. Instrum. Methods Phys. Res. A Owens 458 1-2 413 2001 10.1016/S0168-9002(00)00886-X On the development of compound semiconductor thallium bromide detectors for astrophysics
Nucl. Instrum. Methods Phys. Res. A Kouznetsov 531 1-2 174 2004 10.1016/j.nima.2004.06.003 Development of the technology for growing TlBr detector crystals
Cryst. Growth Des. Zhang 17 12 6426 2017 10.1021/acs.cgd.7b01086 Centimeter-sized inorganic lead halide perovskite CsPbBr 3 crystals grown by an improved solution method
CrystEngComm Sun 16 45 10497 2014 10.1039/C4CE01658K Growth and properties of a noncentrosymmetric polyphosphate CsLa(PO3)4 crystal with deep-ultraviolet transparency
Nature Goldberger 422 6932 599 2003 10.1038/nature01551 Single-crystal gallium nitride nanotubes
J. Cryst. Growth Karunagaran 483 169 2018 10.1016/j.jcrysgro.2017.11.030 Investigation on synthesis, growth, structure and physical properties of AgGa0.5In0.5S2 single crystals for Mid-IR application
J. Phys. Chem. C. Khoram 120 12 6475 2016 10.1021/acs.jpcc.6b02011 Growth and characterization of PDMS-stamped halide perovskite single microcrystals
J. Cryst. Growth Sundaram 329 1 12 2011 10.1016/j.jcrysgro.2011.02.008 Electron backscatter diffraction analysis of a CZT growth tip from a vertical gradient freeze furnace
J. Phys. Chem. Ataka 100 25 10664 1996 10.1021/jp953636z Potential-dependent reorientation of water molecules at an electrode/electrolyte interface studied by surface-enhanced infrared absorption spectroscopy
J. Phys. Chem. C Osawa 112 11 4248 2008 10.1021/jp710386g Structure of water at the electrified platinum-water interface: a study by surface-enhanced infrared absorption spectroscopy
Trans. Nonferr. Met. Soc. China Nan 22 s148 2012 10.1016/S1003-6326(12)61700-2 Determination of trap levels in CZT: In by thermally stimulated current spectroscopy
Nucl. Instrum. Methods Phys. Res. A Xu 767 318 2014 10.1016/j.nima.2014.08.040 Effects of deep-level defects on carrier mobility in CdZnTe crystals
J. Phys. C: Solid State Phys. Dlubek 19 3 331 2000 10.1088/0022-3719/19/3/004 Positron study of native vacancies in doped and undoped GaAs
J. Synth. Cryst. Tang 35 2 306 2006 Study on the positron annihilation lifetime in Cd1-xZnxTe Crystal
IEEE Trans. Nucl. Sci. Datta 62 2 437 2015 10.1109/TNS.2015.2400396 Characterization of stress in thallium bromide devices
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