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NTIS 바로가기Applied physics letters, v.112 no.5, 2018년, pp.051901 -
Reboh, S. (CEA, LETI, MINATEC Campus 1 , 38054 Grenoble, France) , Coquand, R. (CEA, LETI, MINATEC Campus 1 , 38054 Grenoble, France) , Barraud, S. (CEA, LETI, MINATEC Campus 1 , 38054 Grenoble, France) , Loubet, N. (IBM Research 3 , 257 Fuller Road, Albany, New York 12203, USA) , Bernier, N. (CEA, LETI, MINATEC Campus 1 , 38054 Grenoble, France) , Audoit, G. (CEA, LETI, MINATEC Campus 1 , 38054 Grenoble, France) , Rouviere, J.-L. (CEA, INAC-MEM 4 , 38054 Grenoble, France) , Augendre, E. (CEA, LETI, MINATEC Campus 1 , 38054 Grenoble, France) , Li, J. (IBM Research 3 , 257 Fuller Road, Albany, New York 12203, USA) , Gaudiello, J. (IBM Research 3 , 257 Fuller Road, Albany, New York 12203, USA) , Gambacorti, N. (CEA, LETI, MINATEC Campus 1 , 38054 Grenoble, France) , Yamashita, T. (IBM Research 3 , 257 Fuller Road, Albany, New York 12203, USA) , Faynot, O. (CEA, LETI, MINATEC Campus 1 , 38054 Grenoble, France)
Pre-strained fin-patterned Si/SiGe multilayer structures for sub-7 nm stacked gate-all-around Si-technology transistors that have been grown onto bulk-Si, virtually relaxed SiGe, strained Silicon-On-Insulator, and compressive SiGe-On-Insulator were investigated. From strain maps with a nanometer spa...
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