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NTIS 바로가기IEEE transactions on electron devices, v.66 no.1, 2019년, pp.286 - 291
Lee, Changhoon (Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, South Korea) , Ko, Eunah (Department of Electrical and Computer Engineering, University of Seoul, Seoul, South Korea) , Shin, Changhwan (Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, South Korea)
Feedback field-effect transistor (FBFET), an alternative switching device, has received attention due to its ideal steep switching feature. By utilizing the positive feedback phenomenon, the total amount of electrons and holes contributing to drain current is sharply surged. Although the device has ...
Choe, Kihun, Shin, Changhwan. Adjusting the Operating Voltage of an Nanoelectromechanical Relay Using Negative Capacitance. IEEE transactions on electron devices, vol.64, no.12, 5270-5273.
Shukla, Nikhil, Thathachary, Arun V., Agrawal, Ashish, Paik, Hanjong, Aziz, Ahmedullah, Schlom, Darrell G., Gupta, Sumeet Kumar, Engel-Herbert, Roman, Datta, Suman. A steep-slope transistor based on abrupt electronic phase transition. Nature communications, vol.6, 7812-.
Shin, Jaemin, Ko, Eunah, Shin, Changhwan. Analysis on the Operation of Negative Differential Resistance FinFET With Pb(Zr0.52Ti0.48)O3 Threshold Selector. IEEE transactions on electron devices, vol.65, no.1, 19-22.
Choi, Woo Young, Park, Byung-Gook, Lee, Jong Duk, Liu, Tsu-Jae King. Tunneling Field-Effect Transistors (TFETs) With Subthreshold Swing (SS) Less Than 60 mV/dec. IEEE electron device letters : a publication of the IEEE Electron Devices Society, vol.28, no.8, 743-745.
Ko, Eunah, Lee, Hyunjae, Park, Jung-Dong, Shin, Changhwan. Vertical Tunnel FET: Design Optimization With Triple Metal-Gate Layers. IEEE transactions on electron devices, vol.63, no.12, 5030-5035.
Fossum, J.G., Mertens, R.P., Lee, D.S., Nijs, J.F.. Carrier recombination and lifetime in highly doped silicon. Solid-state electronics, vol.26, no.6, 569-576.
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Salahuddin, S., Datta, S.. Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices. Nano letters : a journal dedicated to nanoscience and nanotechnology, vol.8, no.2, 405-410.
Eunah Ko, Hyunjae Lee, Youngin Goh, Sanghun Jeon, Changhwan Shin. Sub-60-mV/decade Negative Capacitance FinFET With Sub-10-nm Hafnium-Based Ferroelectric Capacitor. IEEE journal of the Electron Devices Society, vol.5, no.5, 306-309.
Ko, Eunah, Lee, Jae Woo, Shin, Changhwan. Negative Capacitance FinFET With Sub-20-mV/decade Subthreshold Slope and Minimal Hysteresis of 0.48 V. IEEE electron device letters : a publication of the IEEE Electron Devices Society, vol.38, no.4, 418-421.
Jo, Jaesung, Choi, Woo Young, Park, Jung-Dong, Shim, Jae Won, Yu, Hyun-Yong, Shin, Changhwan. Negative Capacitance in Organic/Ferroelectric Capacitor to Implement Steep Switching MOS Devices. Nano letters : a journal dedicated to nanoscience and nanotechnology, vol.15, no.7, 4553-4556.
Ko, Eunah, Shin, Changhwan. Effective drive current in steep slope FinFET (vs. conventional FinFET). Applied physics letters, vol.111, no.15, 152105-.
The International Technology Roadmap for Semiconductors Emerging Research Devices (ITRS 2 0) 2015
Moore, G.E.. Cramming More Components Onto Integrated Circuits. Proceedings of the IEEE, vol.86, no.1, 82-85.
Liu, T-J K., Markovic, D., Stojanovic, V., Alon, E.. The relay reborn. IEEE spectrum, vol.49, no.4, 40-43.
Jeon, Youngin, Kim, Minsuk, Kim, Yoonjoong, Kim, Sangsig. Switching Characteristics of Nanowire Feedback Field-Effect Transistors with Nanocrystal Charge Spacers on Plastic Substrates. ACS nano, vol.8, no.4, 3781-3787.
Nanotechnology Steep switching characteristics of single-gated feedback field-effect transistors kim 2016 28 55205-1
Jeon, Youngin, Kim, Minsuk, Lim, Doohyeok, Kim, Sangsig. Steep Subthreshold Swing n- and p-Channel Operation of Bendable Feedback Field-Effect Transistors with p+–i–n+ Nanowires by Dual-Top-Gate Voltage Modulation. Nano letters : a journal dedicated to nanoscience and nanotechnology, vol.15, no.8, 4905-4913.
Dirani, H.E., Solaro, Y., Fonteneau, P., Ferrari, P., Cristoloveanu, S.. Properties and mechanisms of Z2-FET at variable temperature. Solid-state electronics, vol.115, no.2, 201-206.
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