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NTIS 바로가기Materials Research Society symposia proceedings, v.742, 2002년, pp.K6.2 -
Nipoti, Roberta , Moscatelli, Francesco , Scorzoni, Andrea , Poggi, Antonella , Cardinali, Gian Carlo , Lazar, Mihai , Raynaud, Christophe , Planson, Dominique , Locatelli, Marie-Laure , Chante, Jean-Pierre
ABSTRACTAl-Ti alloys with 72 wt% Al were employed for the realisation of ohmic contacts on 4×1019 cm-3 p-type ion implanted 4H- and 6H-SiC samples. Contact resistivity characterisations by TLM measurements were done at wafer level in the temperature range 28-290°C. Analysis of the TLM meas...
Lazar, Mihai, Raynaud, Christophe, Planson, Dominique, Locatelli, Marie Laure, Isoird, K., Ottaviani, Laurent, Chante, Jean-Pierre, Nipoti, Roberta, Poggi, Antonella, Cardinali, G.C.. A Comparative Study of High-Temperature Aluminum Post-Implantation Annealing in 6H- and 4H-SiC, Non-Uniform Temperature Effects. Materials science forum, vol.389, 827-830.
Schuldt, S.B.. An exact derivation of contact resistance to planar devices. Solid-state electronics, vol.21, no.5, 715-719.
Alta Freq Ohmic contact resistance evaluation in silicon planar structures: application to the CoSi2/n+ interface 61 341 1987 Scorzoni
Scorzoni, A., Finetti, M.. Metal/semiconductor contact resistivity and its determination from contact resistance measurements. Materials science reports, vol.3, no.2, 79-137.
Crofton, J., Barnes, P. A., Williams, J. R., Edmond, J. A.. Contact resistance measurements on p-type 6H-SiC. Applied physics letters, vol.62, no.4, 384-386.
Crofton, J., Mohney, S.E., Williams, J.R., Isaacs-Smith, T.. Finding the optimum Al–Ti alloy composition for use as an ohmic contact to p-type SiC. Solid-state electronics, vol.46, no.1, 109-113.
Ruff, M., Mitlehner, H., Helbig, R.. SiC devices: physics and numerical simulation. IEEE transactions on electron devices, vol.41, no.6, 1040-1054.
Crofton, J., Beyer, L., Williams, J.R., Luckowski, E.D., Mohney, S.E., Delucca, J.M.. Titanium and aluminum-titanium ohmic contacts to p-type SiC. Solid-state electronics, vol.41, no.11, 1725-1729.
Moscatelli, Francesco, Scorzoni, Andrea, Poggi, Antonella, Cardinali, G.C., Nipoti, Roberta. Al/Ti Ohmic Contacts to p-Type Ion-Implanted 6H-SiC: Mono- and Two- Dimensional Analysis of TLM Data. Materials science forum, vol.433, 673-676.
Finetti, M., Scorzoni, A., Soncini, G.. Lateral current crowding effects on contact resistance measurements in four terminal resistor test patterns. IEEE electron device letters : a publication of the IEEE Electron Devices Society, vol.5, no.12, 524-526.
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