다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
NTIS 바로가기
Materials Research Society symposia proceedings, v.70, 1986년, pp.167 -
Schropp, Ruud E. I. , Snijder, Jan , Verwey, Jan F.
AI-Helper
ABSTRACTThe density of states (DOS) has for the first time been calculated throughout the entire bandgap region of undoped amorphous silicon from quasi-static capacitance-voltage (QSCV) measurements using MOS structures. The QSCV DOS is compared with the DOS obtained by the field-effect method. It i...
Proc. of Conference on Tetrahedrally Bonded Amorphous Semiconductors 318 1981 Fritzsche
Berglund, C.N.. Surface states at steam-grown silicon-silicon dioxide interfaces. IEEE transactions on electron devices, vol.13, no.10, 701-705.
Schropp, R.E.I., Veltkamp, J.W.C., Snijder, J., Verwey, J.F.. On the quality of contacts in a-Si:H staggered electrode thin-film transistors. IEEE transactions on electron devices, vol.32, no.9, 1757-1760.
Phys.Rev. B25 5285 1982 10.1103/PhysRevB.25.5285 Lang
Z.Techn.Phys. 18 588 1937 Meyer
Spear, W. E., Comber, P. Le. Electronic properties of substitutionally doped amorphous Si and Ge. The philosophical magazine, vol.33, no.6, 935-949.
Madan, A., Le Comber, P.G., Spear, W.E.. Investigation of the density of localized states in a-Si using the field effect technique. Journal of non-crystalline solids, vol.20, no.2, 239-257.
Spear, W. E., Le Comber, P. G., Snell, A. J.. An investigation of the amorphous-silicon barrier and p-n junction. Philosophical magazine. B, Physics of condensed matter, electronic, optical, and magnetic properties, vol.38, no.3, 303-317.
Balberg, I.. Relation between distribution of states and the space-charge-region capacitance in semiconductors. Journal of applied physics, vol.58, no.7, 2603-2616.
Sasaki, Goro, Fujita, Shizuo, Sasaki, Akio. Frequency dependence of flat-band capacitance of metal/insulator/glow-discharge deposited hydrogenated amorphous silicon diodes. Journal of applied physics, vol.55, no.8, 3183-3184.
Wey, Horng-Yhi. Surface of amorphous semiconductors and their contacts with metals. Physical review B, Solid state, vol.13, no.8, 3495-3505.
Street, R. A.. Disorder effects on deep trapping in amorphous semiconductors. Philosophical magazine. B, Physics of condensed matter, electronic, optical, and magnetic properties, vol.49, no.1, L15-L20.
[5] Schropp R.E.I. , Snijder J. and Verwey J.F. , this proceedings.
Fritzsche, H.. Density-of-states distribution in the mobility gap of a-Si:H. Journal of non-crystalline solids, vol.77, no.1, 273-280.
Singh, Jasprit, Cohen, Morrel H.. Capacitance-voltage measurements in amorphous Schottky barriers. Journal of applied physics, vol.51, no.1, 413-418.
Hirose, M., Suzuki, T., Döhler, G. H.. Electronic density of states in discharge-produced amorphous silicon. Applied physics letters, vol.34, no.3, 234-236.
해당 논문의 주제분야에서 활용도가 높은 상위 5개 콘텐츠를 보여줍니다.
더보기 버튼을 클릭하시면 더 많은 관련자료를 살펴볼 수 있습니다.
*원문 PDF 파일 및 링크정보가 존재하지 않을 경우 KISTI DDS 시스템에서 제공하는 원문복사서비스를 사용할 수 있습니다.
Copyright KISTI. All Rights Reserved.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.