참고문헌 (16)

1. Proc. of Conference on Tetrahedrally Bonded Amorphous Semiconductors 318 1981 Fritzsche 

2. Berglund, C.N.. Surface states at steam-grown silicon-silicon dioxide interfaces. IEEE transactions on electron devices, vol.13, no.10, 701-705.

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3. Schropp, R.E.I., Veltkamp, J.W.C., Snijder, J., Verwey, J.F.. On the quality of contacts in a-Si:H staggered electrode thin-film transistors. IEEE transactions on electron devices, vol.32, no.9, 1757-1760.

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4. Phys.Rev. B25 5285 1982 10.1103/PhysRevB.25.5285 Lang 

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5. Z.Techn.Phys. 18 588 1937 Meyer 

6. Spear, W. E., Comber, P. Le. Electronic properties of substitutionally doped amorphous Si and Ge. The philosophical magazine, vol.33, no.6, 935-949.

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7. Madan, A., Le Comber, P.G., Spear, W.E.. Investigation of the density of localized states in a-Si using the field effect technique. Journal of non-crystalline solids, vol.20, no.2, 239-257.

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8. Spear, W. E., Le Comber, P. G., Snell, A. J.. An investigation of the amorphous-silicon barrier and p-n junction. Philosophical magazine. B, Physics of condensed matter, electronic, optical, and magnetic properties, vol.38, no.3, 303-317.

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9. Balberg, I.. Relation between distribution of states and the space-charge-region capacitance in semiconductors. Journal of applied physics, vol.58, no.7, 2603-2616.

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10. Sasaki, Goro, Fujita, Shizuo, Sasaki, Akio. Frequency dependence of flat-band capacitance of metal/insulator/glow-discharge deposited hydrogenated amorphous silicon diodes. Journal of applied physics, vol.55, no.8, 3183-3184.

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11. Wey, Horng-Yhi. Surface of amorphous semiconductors and their contacts with metals. Physical review B, Solid state, vol.13, no.8, 3495-3505.

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12. Street, R. A.. Disorder effects on deep trapping in amorphous semiconductors. Philosophical magazine. B, Physics of condensed matter, electronic, optical, and magnetic properties, vol.49, no.1, L15-L20.

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13. [5] Schropp R.E.I. , Snijder J. and Verwey J.F. , this proceedings. 

14. Fritzsche, H.. Density-of-states distribution in the mobility gap of a-Si:H. Journal of non-crystalline solids, vol.77, no.1, 273-280.

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15. Singh, Jasprit, Cohen, Morrel H.. Capacitance-voltage measurements in amorphous Schottky barriers. Journal of applied physics, vol.51, no.1, 413-418.

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16. Hirose, M., Suzuki, T., Döhler, G. H.. Electronic density of states in discharge-produced amorphous silicon. Applied physics letters, vol.34, no.3, 234-236.

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