[논문]Manipulation of valley isospins in strained graphene for valleytronics

Myoung, Nojoon; Choi, Hyungkook; Park, Hee Chul

doi:10.1016/j.carbon.2019.10.040

[해외논문] Manipulation of valley isospins in strained graphene for valleytronics 원문보기

Carbon, v.157, 2020년, pp.578 - 582

Myoung, Nojoon (Department of Physics Education, Chosun University) , Choi, Hyungkook (Department of Physics, Chonbuk National University) , Park, Hee Chul (Center for Theoretical Physics of Complex Systems, Institute for Basic Science)

Abstract ▼ AI-Helper

Abstract Graphene’s outstanding mechanical properties lend to strain engineering, allowing for future valleytronics and nanoelectromechanic applications. In this work, we have found that a Gaussian-shaped strain on a graphene p–n junction results in quantum Hall conductance oscillations due to the rotated angle between valley isospins at the graphene armchair edges. Furthermore, additional Fano resonances were observed as the value of the strain-induced pseudo-magnetic field approaches that of the external magnetic field. The lifted valley degeneracy, stemming from the interplay between the real and pseudo-magnetic fields, results in clearly valley-resolved Fano resonances. Exploring strain engineering as a means to control conductance through valley isospin manipulation is believed to open the door to potential graphene valleytronic devices. Graphical abstract [DISPLAY OMISSION]

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