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NTIS 바로가기Thin solid films, v.696, 2020년, pp.137782 -
Sung, Nark-Eon (Pohang Accelerator Laboratory, POSTECH) , Marcus, Matthew A. (Advanced Light Source, Lawrence Berkeley National Laboratory) , Lee, Kug-Seung (Pohang Accelerator Laboratory, POSTECH) , Yun, Hyung Joong (The Center of Material Analysis and Research, Korea Basic Science Institute) , Lee, Ik-Jae (Pohang Accelerator Laboratory, POSTECH)
Abstract To examine the effects of annealing temperatures, Zr-doped ZnO (Zn1- x Zr x O1+δ; ZZO) thin films with x = ~0.067 were deposited at room temperature by radio frequency co-sputtering on quartz substrates and annealed in air at 300 °C, 400 °C, 500 °C, respectively. Anneali...
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